Driver and semiconductor memory device including the same

1. A driver, comprising:

a driving block suitable for driving a data transferred through a first signal line to a second signal line;

a first precharge unit suitable for precharging the second signal line with a first driving power during a first section of a precharge operation; and

a second precharge unit suitable for precharging the second signal line with a second driving power which is different from the first driving power during a second section of the precharge operation subsequent to the first section of the precharge operation,

wherein the first driving power has a smaller value than the second driving power, and

wherein the first section of the precharge operation is performed after the driving block drives each data of successive data transferred through the first signal line to the second signal line, and the second section of the precharge operation is performed after the driving block drives the last data of the successive data transferred through the first signal line to the second signal line.

2. The driver of claim 1 , wherein the precharge operation including the first and second sections are performed after the driving block drives a single data transferred through the first signal line to the second signal line.

3. The driver of claim 1 , wherein the first and second signal lines are a pair of differential signal lines.

4. The driver of claim 3 , wherein the first precharge unit includes an equalization part suitable for equalizing the second signal line during the first precharge operation.

5. A driver, comprising:

a driving block suitable for performing a command operation on a signal line;

a first precharge unit suitable for precharging the signal line with a first driving power between successive command operations; and

a second precharge unit suitable for precharging the signal line with a second driving power which is different from the first driving power after the driving block performs the last command operation among the successive command operations,

wherein the first precharge unit precharges the signal line with the first driving power during a first section of a precharge operation, and the second precharge unit precharges the signal line with the second driving power which is different from the first driving power during a second section of the precharge operation subsequent to the first section of the precharge operation,

wherein the first driving power has a smaller value than the second driving power.

6. The driver of claim 5 , further comprising:

a third precharge unit suitable for precharging the signal line with the first driving power before the signal line is precharged with the second driving power after the last command operation is performed.

7. The driver of claim 6 , wherein the signal lines are a pair of differential signal lines.

8. The driver of claim 7 , wherein the first and third precharge units include an equalization part suitable for equalizing the signal line.

9. The driver of claim 5 , wherein the command operation is a read command operation or a write command operation.

10. A semiconductor memory device, comprising:

a memory cell array including a plurality of memory cells; and

a write driver suitable for writing a data in the memory cell array,

wherein the write driver includes:

a driving block suitable for driving the data transferred through a first signal line to a second signal line; and

a precharge block suitable for precharging the second signal line with a first driving power during a first section of a precharge operation and precharging the second signal line with a second driving power different from the first driving power during a second section of the precharge operation subsequent to the first section of the precharge operation,

wherein the first driving power has a smaller value than the second driving power,

wherein the first section of the precharge operation is performed after the driving block drives each data of successive data transferred through the first signal line to the second signal line, and the second section of the precharge operation is performed after the driving block drives the last data of the successive data transferred through the first signal line to the second signal line.

11. The semiconductor memory device of claim 10 , wherein the precharge block includes:

a first precharge unit suitable for precharging the second signal line with the first driving power during the first section of the precharge operation; and

a second precharge unit suitable for precharging the second signal line with the second driving power during the second section of the precharge operation.

12. The semiconductor memory device of claim 11 , wherein the first and second signal lines are a pair of differential signal lines.

13. The semiconductor memory device of claim 12 , wherein the first precharge unit includes an equalization part for equalizing the second signal line during the first precharge operation.

14. The semiconductor memory device of claim 10 , wherein the first signal line is a global input/output line, and the second signal line is a local input/output line.

15. The semiconductor memory device of claim 10 , wherein the precharge operation including the first and second sections are performed after the driving block drives a single data transferred through the first signal line to the second signal line.