Glass substrate for chemical strengthening, and method for producing same
View Patent ↗A glass substrate for chemical strengthening is formed by a float process. The glass substrate includes at least one layer of a film formed of an inorganic material that contains H atoms in a concentration of 1.0×10 15 to 1.0×10 19 atom/mm 3 . The at least one layer is formed on at least one surface of the glass substrate.
1. A glass substrate for chemical strengthening, formed by a float process,
comprising at least one layer of a film formed of an inorganic material that contains H atoms in a concentration of 1.0×10 15 to 1.0×10 19 atom/mm 3 , the at least one layer being formed on at least one surface of the glass substrate.
2. The glass substrate for chemical strengthening according to claim 1 , wherein the inorganic material is an alkali-free oxide.
3. The glass substrate for chemical strengthening according to claim 2 , wherein the alkali-free oxide includes at least one of an oxide and a composite oxide, the oxide and composite oxide include at least one element selected from the group consisting of silicon, titanium, tin, aluminum, zinc, chromium, copper, manganese, iron, cobalt, nickel, zirconium, silver, niobium, molybdenum, antimony, and indium.
4. The glass substrate for chemical strengthening according to claim 1 , wherein the film formed of the inorganic material is a film formed by an atmospheric pressure CVD method.
5. A glass substrate obtained by subjecting the glass substrate for chemical strengthening according to claim 1 to a chemical strengthening process.
6. A method for producing a glass substrate for chemical strengthening, the method comprising forming at least one layer of a film formed of an inorganic material that contains H atoms in a concentration of 1.0×10 15 to 1.0×10 19 atom/mm 3 on at least one surface of a glass substrate formed by a float process.
7. The method for producing a glass substrate for chemical strengthening according to claim 6 , wherein the film formed of the inorganic material that contains H atoms in a concentration of 1.0×10 15 to 1.0×10 19 atom/mm 3 is formed by an atmospheric pressure CVD method.