Granted Patent B1

US 9,053,735 · App. 14/310,360 · Granted Jun 9, 2015

Abstract

Claims (40)

1. A method for fabricating magnetic transducer having air-bearing surface (ABS) location and an intermediate layer having a trench therein, the trench having a shape and location corresponding to a main pole, the method comprising:

depositing at least one main pole layer, a portion of the at least one main pole layer residing in the trench;

providing a refill layer on the at least one main pole layer;

planarizing at least the refill layer; and

performing a full-film metal planarization for at least one of the refill layer and the at least one main pole layer.

2. The method of claim 1 wherein the step of providing the refill layer further includes

depositing the refill layer without the at least one main pole layer being patterned after deposition and before the refill layer is provided.

3. The method of claim 1 further comprising:

providing a hard mask layer, the hard mask layer residing between the refill layer and the at least one main pole layer.

4. The method of claim 1 wherein the full-film metal planarization is material neutral.

5. The method of claim 4 wherein the full-film metal planarization removes the refill layer at a first rate and the at least one main pole layer at a second rate, the first rate being substantially the same as the second rate.

6. The method of claim 1 wherein the step of performing the full-film metal planarization has a post-planarization root mean square height variation of not more than seven nanometers.

7. The method of claim 6 wherein the post-planarization root mean square height variation is not more than five nanometers.

8. The method of claim 6 wherein the post-planarization root mean square height variation is not more than two nanometer.

9. The method of claim 1 wherein the step of performing the full-film metal planarization further includes:

performing at least one of a bulk ion mill and an ion beam scan.

10. The method of claim 9 wherein the step of performing the full-film metal planarization further includes:

performing the ion beam scan only.

11. The method of claim 9 wherein the step of performing the full-film metal planarization further includes:

performing the bulk ion mill to remove a first portion of at least one of the refill layer and the at least one main pole layer;

performing the ion beam scan after the bulk ion mill to remove a second portion of the at least one of the refill layer and the at least one main pole layer.

12. The method of claim 9 wherein the magnetic transducer resides on a wafer having a wafer size, wherein the bulk ion mill utilizes a first ion beam size not less than the wafer size and wherein the ion beam scan utilizes a second ion beam size less than the wafer size.

13. The method of claim 12 wherein the second ion beam size is at least ten millimeters and not more than fifty millimeters in diameter.

14. The method of claim 13 wherein the second ion beam size is at least fifteen millimeters and not more than twenty millimeters in the diameter.

15. The method of claim 12 wherein the refill layer has a top surface and wherein the ion beam scan is at an angle from perpendicular to the top surface of at least zero degrees and not more than eighty degrees.

16. The method of claim 15 wherein the angle is at least twenty-five degrees and not more than fifty-five degrees.

17. The method of claim 1 wherein the refill layer includes at least one of aluminum oxide and silicon oxide and the at least one main pole layer includes CoFe.

18. The method of claim 1 wherein the planarizing step terminates within the refill layer.

19. The method of claim 1 wherein the planarizing step terminates within the at least one main pole layer.

20. The method of claim 1 further comprising:

performing a chemical mechanical planarization after the full-film metal planarization.

21. A method for fabricating magnetic transducer having air-bearing surface (ABS) location and an intermediate layer having a trench therein, the trench having a shape and location corresponding to a main pole, the magnetic transducer residing on a wafer having a wafer size, the method comprising:

plating at least one main pole layer, a portion of the at least one main pole layer residing in the trench, the main pole layer including CoFe;

providing a refill layer on the at least one main pole layer without the at least one main pole layer being patterned after deposition and before the refill layer is provided, the refill layer including at least one of aluminum oxide and silicon oxide;

planarizing at least the refill layer and the at least one main pole layer; and

performing a full-film metal planarization, the full-film metal planarization being material neutral and having a post-planarization root mean square height variation of not more than seven nanometers, the step of performing the full-film metal planarization further including

performing the bulk ion mill to remove a first portion of at least one of the refill layer and the at least one main pole layer, the bulk ion mill utilizing a first ion beam size not less than the wafer size;

performing the ion beam scan after the bulk ion mill to remove a second portion of the at least one of the refill layer and the at least one main pole layer, the ion beam scan utilizing a second ion beam size less than the wafer size, the second ion beam size being at least fifteen millimeters and not more than twenty millimeters in diameter.

22. The method of claim 21 further comprising:

providing a hard mask layer, the hard mask layer residing between the refill layer and the at least one main pole layer.

Assignments (9)