Write mapping to mitigate hard errors via soft-decision decoding
View Patent ↗An apparatus having mapping and interface circuits. The mapping circuit (i) generates a coded item by mapping write unit bits using a modulation or recursion of past-seen bits, and (ii) calculates a particular state to program into a nonvolatile memory cell. The interface circuit programs the cell at the particular state. Two normal cell states are treated as at least four refined states. The particular state is one of the refined states. A mapping to the refined states mitigates programming write misplacement that shifts an analog voltage of the cell from the particular state to an erroneous state. The erroneous state corresponds to a readily observable illegal or atypical write sequence, and results in a modified soft decision from that calculated based on the normal states only. A voltage swing between the particular state and the erroneous state is less than between the normal states.
1. An apparatus comprising:
a mapping circuit configured to (i) generate a coded item by performing a mapping operation on one or more bits of a write unit using a modulation or a recursion of past-seen bits, and (ii) calculate a particular state to program one or more bits of the coded item into a cell of a nonvolatile memory; and
an interface circuit configured to program the cell at the particular state, wherein (i) two normal states of the cell are treated as at least four refined states, (ii) the particular state is one of the refined states, (iii) the mapping operation mitigates write error that shifts an analog voltage of the cell from the particular state to an erroneous state of the refined states, and (iv) a voltage swing between the particular state and the erroneous state is less than a voltage difference between the two normal states.
2. The apparatus according to claim 1 , wherein the nonvolatile memory comprises a flash memory.
3. The apparatus according to claim 1 , further comprising an encoder circuit configured to generate the write unit by encoding data with an error correction code.
4. The apparatus according to claim 3 , wherein (i) the interface circuit is further configured to generate a read unit by reading the write unit from the nonvolatile memory, and (ii) the mapping circuit is further configured to correct the read unit by a reverse mapping operation of the coded item per the modulation.
5. The apparatus according to claim 4 , further comprising a decoder circuit configured to regenerate the data by decoding the read unit using the error correction code after the read unit is corrected by the mapping circuit.
6. The apparatus according to claim 5 , wherein the read unit is decoded using a low-density parity check decode.
7. The apparatus according to claim 5 , wherein the mapping circuit is further configured to generate soft-decision information usable in decoding the read unit in response to the correction of the read unit.
8. The apparatus according to claim 1 , wherein the modulation is at least one of (i) an error correction code modulation, (ii) a convolutional trellis code modulation, (iii) a rate-less inter-cell-interference modulation, and (iv) a pre-coded controlled inter-cell-interference modulation.
9. The apparatus according to claim 1 , wherein the mapping circuit, the interface circuit and the nonvolatile memory form a solid-state drive.
10. The apparatus according to claim 1 , wherein the erroneous state results in a modified soft decision from that calculated based on the two normal states only.
11. A method for write mapping to mitigate hard errors via soft-decision decoding, comprising the steps of:
generating a coded item by performing a mapping operation on one or more bits of a write unit using a modulation or a recursion of past-seen bits;
calculating a particular state to program one or more bits of the coded item into a cell of a nonvolatile memory; and
programming the cell at the particular state, wherein (i) two normal states of the cell are treated as at least four refined states, (ii) the particular state is one of the refined states, (iii) the mapping operation mitigates write error that shifts an analog voltage of the cell from the particular state to an erroneous state of the refined states, and (iv) a voltage swing between the particular state and the erroneous state is less than a voltage difference between the two normal states.
12. The method according to claim 11 , wherein the nonvolatile memory comprises a flash memory.
13. The method according to claim 11 , further comprising the step of:
generating the write unit by encoding data with an error correction code.
14. The method according to claim 13 , further comprising the steps of:
generating a read unit by reading the write unit from the nonvolatile memory; and
correcting the read unit by a reverse mapping operation of the coded item per the modulation.
15. The method according to claim 14 , further comprising the step of:
regenerating the data by decoding the read unit using the error correction code after the read unit is corrected.
16. The method according to claim 15 , wherein the read unit is decoded using a low-density parity check decode.
17. The method according to claim 15 , further comprising the step of:
generating soft-decision information usable in decoding the read unit in response to the correction of the read unit.
18. The method according to claim 11 , wherein the modulation is at least one of (i) an error correction code modulation, (ii) a convolutional trellis code modulation, (iii) a rate-less inter-cell-interference modulation, and (iv) a pre-coded controlled inter-cell-interference modulation.
19. The method according to claim 11 , wherein the method is implemented in a solid-state drive.
20. An apparatus comprising:
a nonvolatile memory configured to process a plurality of read/write operations; and
a controller configured to (i) generate a coded item by performing a mapping operation on one or more bits of a write unit using a modulation or a recursion of past-seen bits, (ii) calculate a particular state to program one or more bits of the coded item into a cell of the nonvolatile memory, and (iii) program the cell at the particular state, wherein (a) two normal states of the cell are treated as at least four refined states, (b) the particular state is one of the refined states, (c) the mapping operation mitigates write error that shifts an analog voltage of the cell from the particular state to an erroneous state of the refined states, and (d) a voltage swing between the particular state and the erroneous state is less than a voltage difference between the two normal states.