Semiconductor device, method of manufacturing the same, display unit, and electronic apparatus
View Patent ↗A semiconductor device includes: a capacitor including a first insulating film between a lower electrode and an upper electrode; and a first laminated structure including a second insulating film and a semiconductor film, the second insulating film and the semiconductor film being located between part or all of a rim of the lower electrode and the first insulating film.
1. A semiconductor device, comprising:
a capacitor including a first insulating film between a lower electrode and an upper electrode;
a first laminated structure including a second insulating film and a semiconductor film, the second insulating film and the semiconductor film being located between part or all of a rim of the lower electrode and the first insulating film;
a first wiring; and
a second wiring, part or all of the second wiring being opposed to the first wiring, wherein
a second laminated structure and the first insulating film are laminated and arranged between the first wiring and the second wiring, the second laminated structure having a configuration that is the same as a configuration of the first laminated structure.
2. The semiconductor device according to claim 1 , wherein the lower electrode, the second insulating film, the semiconductor film, the first insulating film, and the upper electrode are arranged in this order in the rim of the lower electrode.
3. The semiconductor device according to claim 1 , wherein the first insulating film is in contact with the lower electrode and the upper electrode in regions other than a portion where the first laminated structure is provided.
4. The semiconductor device according to claim 1 , wherein a film thickness of the first insulating film is smaller than a film thickness of the second insulating film.
5. The semiconductor device according to claim 1 , wherein planar shapes of the second insulating film and the semiconductor film are same as each other.
6. The semiconductor device according to claim 1 , wherein
part of the upper electrode is projected outside the lower electrode in a planar view, and
the first laminated structure is provided in a location opposed to a projecting portion of the upper electrode.
7. The semiconductor device according to claim 1 , further comprising a transistor that includes a gate insulating film, a channel film, and a channel protective film in this order on a gate electrode, wherein
the channel protective film is made of a material that is same as a material of the first insulating film.
8. The semiconductor device according to claim 7 , wherein the gate electrode, the channel film, and the gate insulating film are made of materials that are respectively same as materials of the lower electrode, the semiconductor film, and the second insulating film.
9. The semiconductor device according to claim 7 , wherein the transistor includes source-drain electrodes electrically connected to the channel film, and
each of the source-drain electrodes is made of a material that is same as a material of the upper electrode.
10. The semiconductor device according to claim 1 , wherein the semiconductor film is made of an oxide semiconductor material.
11. A display unit provided with a display layer and a semiconductor device driving the display layer, the semiconductor device comprising:
a capacitor including a first insulating film between a lower electrode and an upper electrode;
a first laminated structure including a second insulating film and a semiconductor film, the second insulating film and the semiconductor film being located between part or all of a rim of the lower electrode and the first insulating film;
a first wiring; and
a second wiring, part or all of the second wiring being opposed to the first wiring, wherein
a second laminated structure and the first insulating film are laminated and arranged between the first wiring and the second wiring, the second laminated structure having a configuration that is the same as a configuration of the first laminated structure.
12. An electronic apparatus provided with a display unit including a display layer and a semiconductor device driving the display layer, the semiconductor device comprising:
a capacitor having a first insulating film between a lower electrode and an upper electrode;
a first laminated structure including a second insulating film and a semiconductor film, the second insulating film and the semiconductor film being located between part or all of a rim of the lower electrode and the first insulating film,
a first wiring; and
a second wiring, part or all of the second wiring being opposed to the first wiring, wherein
a second laminated structure and the first insulating film are laminated and arranged between the first wiring and the second wiring, the second laminated structure having a configuration that is the same as a configuration of the first laminated structure.
13. A method of manufacturing a semiconductor device, the method comprising:
forming a lower electrode;
forming a laminated structure on part or all of a rim of the lower electrode, the laminated structure including a second insulating film and a semiconductor film;
providing an upper electrode to be opposed to the lower electrode and the laminated structure with a first insulating film in between to form a capacitor
providing a first wiring; and
providing a second wiring, part or all of the second wiring being opposed to the first wiring, wherein a second laminated structure and the first insulating film are laminated and arranged between the first wiring and the second wiring, the second laminated structure having a configuration that is the same as a configuration of the laminated structure.
14. The method according to claim 13 , wherein the semiconductor film and the second insulating film are patterned with the use of same mask.
15. The method according to claim 14 , wherein
a transistor is formed together with the capacitor, the transistor having a gate insulating film, a channel film, and a channel protective film in this order on a gate electrode, and
respective combinations of the gate insulating film and the second insulating film, the channel film and the semiconductor film, and the channel protective film and the first insulating film are formed in respective same steps with the use of respective same masks.
16. The method according to claim 13 , wherein
a third wiring is formed in a layer that is same as a layer of the lower electrode,
the third wring is covered with an insulating material film and a semiconductor material film, the insulating material film being made of a material that is same as a material of the second insulating film, and the semiconductor material film being made of a material that is same as a material of the semiconductor film,
the insulating material film and the semiconductor material film that cover the third wiring are removed, and thereafter, the third wiring is covered with the first insulating film, and
a connection hole is formed, the connection hole penetrating through the first insulating film to reach the third wiring.