Polycrystalline diamond compacts including infiltrated polycrystalline diamond table and methods of making same
View Patent ↗Embodiments relate to polycrystalline diamond compacts and methods of manufacturing such compacts in which an at least partially leached polycrystalline diamond (“PCD”) table is infiltrated with first and second infiltrants. The first infiltrant includes a low viscosity cobalt-based and/or nickel-based alloy infiltrant. The second infiltrant (e.g., copper) is specifically selected to be more easily infiltrated and/or removed (e.g., leached) than a pure cobalt infiltrant. In an embodiment, a method includes forming a PCD table in the presence of a metal-solvent catalyst in a first high-pressure/high-temperature (“HPHT”) process. The PCD table may be at least partially leached to remove at least a portion of the metal-solvent catalyst therefrom. The leached PCD table and a substrate are subjected to a second HPHT process effective to bond the substrate to the leached PCD table while at least partially infiltrating the PCD table with at least the first and second infiltrants.
1. A method of fabricating a polycrystalline diamond compact, comprising:
forming a polycrystalline diamond table by sintering a plurality of diamond particles together in the presence of a metal-solvent catalyst in a first high-pressure/high-temperature process including a cell pressure of about 7.5 GPa to about 9 GPa, the polycrystalline diamond table including a plurality of bonded diamond grains defining a plurality of interstitial regions, at least a portion of the plurality of interstitial regions including the metal-solvent catalyst therein;
at least partially leaching the polycrystalline diamond table to remove at least a portion of the metal-solvent catalyst therefrom to form an at least partially leached polycrystalline diamond table;
attaching the at least partially leached polycrystalline diamond table to a cemented carbide substrate by subjecting the at least partially leached polycrystalline diamond table and the cemented carbide substrate having a first infiltrant therein to a second high-pressure/high-temperature process under diamond-stable temperature-pressure conditions effective to at least partially infiltrate the at least partially leached polycrystalline diamond table with the first infiltrant inward from a back surface bonded to an interfacial surface on the substrate, the first infiltrant including a cobalt alloy or a nickel alloy having about 1 wt % to about 4 wt % of at least one eutectic forming alloying constituent by weight, wherein the at least one eutectic forming alloying constituent is selected from the group consisting of silicon, boron, phosphorous, tantalum, and carbides thereof, wherein the at least one eutectic forming alloying constituent is present in a hypo-eutectic amount or a hyper-eutectic amount; and
infiltrating the at least partially leached polycrystalline diamond table with a second infiltrant inward from an upper surface thereof, the second infiltrant including copper.
2. The method of claim 1 wherein attaching the polycrystalline diamond table to the substrate and infiltrating the polycrystalline diamond table with a second infiltrant are performed substantially simultaneously during the second high-pressure/high-temperature process.
3. The method of claim 1 wherein the first infiltrant in the cemented carbide substrate is a cementing constituent of the cemented carbide substrate.
4. The method of claim 1 wherein the second infiltrant further includes aluminum.
5. The method of claim 1 wherein the first and second infiltrants form an alloy that is interstitially disposed within the infiltrated polycrystalline diamond table, the alloy exhibiting a composition that varies through a thickness of the infiltrated polycrystalline diamond table.
6. The method of claim 5 wherein the alloy is disposed in a single region therein, the single region including a gradient in which the first infiltrant is present in a larger proportion in the alloy nearer the interfacial surface and the second infiltrant is present in a larger proportion in the in the alloy nearer the working surface.
7. The method of claim 1 wherein the first infiltrant is interstitially disposed at least partially within at least a first region extending inwardly from the interfacial surface and the second infiltrant is interstitially disposed at least partially within at least a second region extending inwardly from the working surface of the at least partially leached polycrystalline diamond table towards the interfacial surface.
8. The method of claim 1 wherein infiltrating the at least partially leached polycrystalline diamond table with a second infiltrant includes positioning at least one of a disc or foil containing a component of the second infiltrant on the upper surface of the at least partially leached PCD table prior to the second high pressure/high temperature process.
9. The method of claim 7 wherein a third region extends between the first region and the second region.
10. The method of claim 9 wherein the third region comprises an alloy of the first infiltrant and the second infiltrant, the alloy forming a gradient wherein the first infiltrant is present in a larger proportion nearer the interfacial surface and the second infiltrant is present in a larger proportion nearer the working surface.
11. The method of claim 8 , further comprising leaching at least one of the first infiltrant or the second infiltrant from the polycrystalline diamond table.
12. The method of claim 8 wherein the disc or foil is 0.003 inches thick or less.
13. The method of claim 12 wherein the second infiltrant includes aluminum.
14. The method of claim 1 wherein the at least one eutectic forming alloying constituent is present in an amount effective to reduce a melting temperature of the cobalt-silicon alloy under standard pressure conditions to about 1300° C. or less.
15. The method of claim 1 , further comprising leaching the infiltrated polycrystalline diamond table to form a region extending inwardly from the upper working surface thereof that is substantially free of at least one of the first infiltrant or the second infiltrant.
16. A method of fabricating a polycrystalline diamond compact, comprising:
forming a polycrystalline diamond table by sintering a plurality of diamond particles together in the presence of a metal-solvent catalyst in a first high-pressure/high-temperature process including a cell pressure of at least about 5 GPa, the polycrystalline diamond table including a plurality of bonded diamond grains defining a plurality of interstitial regions, at least a portion of the plurality of interstitial regions including the metal-solvent catalyst therein;
at least partially leaching the polycrystalline diamond table to remove at least a portion of the metal-solvent catalyst therefrom to form an at least partially leached polycrystalline diamond table;
attaching the at least partially leached polycrystalline diamond table to a cemented carbide substrate by subjecting the at least partially leached polycrystalline diamond table and the cemented carbide substrate having a first infiltrant therein to a second high-pressure/high-temperature process under diamond-stable temperature-pressure conditions effective to at least partially infiltrate the at least partially leached polycrystalline diamond table with the first infiltrant inward from a back surface bonded to an interfacial surface on the substrate, the first infiltrant including a cobalt alloy or a nickel alloy having about 1 wt % to about 4 wt % of at least one eutectic forming alloying constituent by weight, wherein the at least one eutectic forming alloying constituent is selected from the group consisting of silicon, boron, phosphorous, tantalum, and carbides thereof, wherein the at least one eutectic forming alloying constituent is present in a hypo-eutectic amount or a hyper-eutectic amount; and
infiltrating the at least partially leached polycrystalline diamond table with a second infiltrant inward from an upper surface thereof, the second infiltrant including copper.