Semiconductor device
A semiconductor device includes a power amplifier for amplifying RF signals in multiple frequency bands, an output matching circuit connected to an output of the power amplifier, a first capacitor connected at a first end to an output of the output matching circuit, multiple output paths, a switch connected to a second end of the first capacitor and directing each of the RF signals to a respective one of the output paths in accordance with frequency band of the each of the RF signals, and multiple second capacitors. Each second capacitor is connected in series to a respective one of the output paths. The switch and either the first capacitor or the second capacitors, or both the first and second capacitors, are integrated as a single monolithic microwave integrated circuit.
1. A semiconductor device comprising:
a power amplifier for amplifying RF signals in a plurality of frequency bands;
an output matching circuit connected to an output of said power amplifier;
a first capacitor connected at a first end to an output of said output matching circuit;
a plurality of output paths;
a switch connected to a second end of said first capacitor and directing each of the RF signals to one of said plurality of output paths in accordance with frequency band of each of the RF signals; and
a plurality of second capacitors, each second capacitor being connected in series to a respective one of said output paths, wherein
capacitance of said first capacitor is larger than capacitance of any of said second capacitors,
the capacitance of said first capacitor and the capacitances of said second capacitors satisfy the following equation:
0.8 √{square root over (N)}·C OUT — k ≦C IN ≦1.2 √{square root over (N)}·C OUT — k
where C IN is the capacitance of said first capacitor, C OUT — k is the capacitance of a kth one of said second capacitors, k=1, 2, . . . , N, and N is the number of said second capacitors.
2. The semiconductor device according to claim 1 , wherein said switch and either said first capacitor or said plurality of second capacitors, or both of said first capacitor and said plurality of second capacitors, are integrated as a single monolithic microwave integrated circuit.
3. The semiconductor device according to claim 2 , wherein said monolithic microwave integrated circuit is located on a layer of silicon that is disposed on an insulating film.
4. The semiconductor device according to claim 1 , wherein
the capacitance of said first capacitor and the capacitances of said second capacitors are selected to maximize combined capacitance of said first capacitor and said plurality of second capacitors, and
total area occupied by said first capacitor and by said plurality of second capacitors is a fixed predetermined value.
5. The semiconductor device according to claim 1 , wherein respective second capacitors of said plurality of second capacitors have respective different capacitances and second capacitors connected to output paths transmitting lower frequency band RF signals have larger capacitances than second capacitors connected to output paths for transmitting higher frequency band RF signals.
6. The semiconductor device according to claim 1 , further comprising a plurality of third capacitors, each third capacitor being connected between a respective one of said output paths and ground, wherein capacitances of said second capacitors and capacitances of said third capacitors are selected to optimize output power of said semiconductor device over the plurality of frequency bands.
7. The semiconductor device according to claim 1 , wherein said switch is a high electron mobility transistor.
8. A semiconductor device comprising:
a power amplifier for amplifying RF signals in a plurality of frequency bands;
an output matching circuit connected to an output of said power amplifier;
a first capacitor connected at a first end to an output of said output matching circuit;
a plurality of output paths;
a switch connected to a second end of said first capacitor and directing each of the RF signals to one of said plurality of output paths in accordance with frequency band of each of the RF signals;
a plurality of second capacitors, each second capacitor being connected in series to a respective one of said output paths, wherein capacitance of said first capacitor is larger than capacitance of any of said second capacitors;
a first protection circuit connected between a signal path for the RF signals and ground so an electrostatic discharge (ESD) surge flows to ground;
a power terminal for applying a DC voltage to said switch; and
a second protection circuit connected between said signal path and said power terminal so an ESD surge flows to ground through said signal path and said first protection circuit.
9. The semiconductor device according to claim 8 , further comprising a plurality of third protection circuits for passing an ESD surge therethrough, wherein one of said third protection circuits are connected in parallel with said first capacitor, and all other third protection circuits are connected in parallel with respective ones of said second capacitors.
10. The semiconductor device according to claim 9 , wherein said first, second, and third protection circuits include a diode or field effect transistor.
11. The semiconductor device according to claim 8 , wherein respective second capacitors of said plurality of second capacitors have respective different capacitances and second capacitors connected to output paths transmitting lower frequency band RF signals have larger capacitances than second capacitors connected to output paths for transmitting higher frequency band RF signals.
12. The semiconductor device according to claim 8 , further comprising a plurality of third capacitors, each third capacitor being connected between a respective one of said output paths and ground, wherein capacitances of said second capacitors and capacitances of said third capacitors are selected to optimize output power of said semiconductor device over the plurality of frequency bands.
13. The semiconductor device according to claim 8 , wherein said switch and either said first capacitor or said plurality of second capacitors, or both of said first capacitor and said plurality of second capacitors, are integrated as a single monolithic microwave integrated circuit.
14. The semiconductor device according to claim 13 , wherein said monolithic microwave integrated circuit is located on a layer of silicon that is disposed on an insulating film.
15. The semiconductor device according to claim 8 , wherein said switch is a high electron mobility transistor.
16. The semiconductor device according to claim 8 , wherein
the capacitance of said first capacitor and the capacitances of said second capacitors are selected to maximize combined capacitance of said first capacitor and said plurality of second capacitors, and
total area occupied by said first capacitor and by said plurality of second capacitors is a fixed predetermined value.