Passivation of light-receiving surfaces of solar cells with high energy gap (EG) materials
View Patent ↗Methods of passivating light-receiving surfaces of solar cells with high energy gap (Eg) materials, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface. A passivating dielectric layer is disposed on the light-receiving surface of the substrate. A Group III-nitride material layer is disposed above the passivating dielectric layer. In another example, a solar cell includes a substrate having a light-receiving surface. A passivating dielectric layer is disposed on the light-receiving surface of the substrate. A large direct band gap material layer is disposed above the passivating dielectric layer, the large direct band gap material layer having an energy gap (Eg) of at least approximately 3.3. An anti-reflective coating (ARC) layer disposed on the large direct band gap material layer, the ARC layer comprising a material different from the large direct band gap material layer.
1. A solar cell, comprising:
a substrate having a light-receiving surface;
a passivating dielectric layer disposed on the light-receiving surface of the substrate;
a Group III-nitride material layer disposed above the passivating dielectric layer, wherein the Group III-nitride material layer comprises gallium; and
an interfacial layer disposed directly between the passivating dielectric layer and the Group III-nitride material layer, the interfacial layer comprising a material different from the passivating dielectric layer and different from the Group III-nitride material layer, wherein the interfacial layer is a silicon-rich amorphous silicon layer and has a thickness approximately in the range of 30-50 Angstroms.
2. The solar cell of claim 1 , wherein the Group III-nitride material layer is disposed on the passivating dielectric layer.
3. The solar cell of claim 1 , wherein the Group III-nitride material layer is selected from the group consisting of an aluminum gallium nitride (Al x Ga 1-x N, where 0<x<1) layer, and a gallium nitride (GaN) layer.
4. The solar cell of claim 1 , further comprising:
an anti-reflective coating (ARC) layer disposed on the Group III-nitride material layer, the ARC layer comprising a material different from the Group III-nitride material layer.
5. The solar cell of claim 4 , wherein the ARC layer is a layer selected from the group consisting of an aluminum oxide (AlO x , x is equal to or less than 1.5) layer and a silicon oxynitride (SiO y N z , y>0, z>0) layer, and wherein the ARC layer and the Group III-nitride material layer together form a dual layer anti-reflective coating for the solar cell.
6. The solar cell of claim 5 , wherein the Group III-nitride material layer has a thickness approximately in the range of 50-900 Angstroms and has an index of refraction of approximately 2.0-2.4, and wherein the ARC layer has a thickness approximately in the range of 300-1500 Angstroms and has an index of refraction of approximately 1.8.
7. The solar cell of claim 6 , wherein the Group III-nitride material layer and the ARC layer together provide current enhancement and stability for the solar cell.
8. The solar cell of claim 4 , wherein the ARC layer is a layer of hydrogenated silicon nitride (SiN:H).
9. The solar cell of claim 8 , wherein the Group III-nitride material layer has a thickness approximately in the range of 30-100 Angstroms and has an index of refraction of approximately 2.0-2.4, and wherein the layer of SiN:H has a thickness of approximately 700 Angstroms and has an index of refraction greater than approximately 1.9.
10. The solar cell of claim 9 , wherein the Group III-nitride material layer and the ARC layer together provide stability for the solar cell while the high band Eg material provides passivation with no absorption of the photogenerating spectrum.
11. The solar cell of claim 1 , wherein the substrate is a crystalline silicon substrate, and the passivating dielectric layer is a layer of silicon dioxide (SiO 2 ) having a thickness approximately in the range of 10-300 Angstroms.
12. The solar cell of claim 1 , wherein the light-receiving surface has a texturized topography, and wherein both the passivating dielectric layer and the Group III-nitride material layer are conformal with the texturized topography of the light-receiving surface.
13. The solar cell of claim 1 , wherein the substrate further comprises a back surface opposite the light-receiving surface, the solar cell further comprising:
a plurality of alternating N-type and P-type semiconductor regions at or above the back surface of the substrate; and
a conductive contact structure electrically connected to the plurality of alternating N-type and P-type semiconductor regions.
14. A solar cell, comprising:
a substrate having a light-receiving surface;
a passivating dielectric layer disposed directly on the light-receiving surface of the substrate;
an interfacial layer disposed directly on the passivating dielectric layer;
a Group III-nitride material layer disposed directly on the interfacial layer, wherein the interfacial layer comprises a material different from the passivating dielectric layer and different from the Group III-nitride material layer; and
an anti-reflective coating (ARC) layer disposed directly on the Group III-nitride material layer, the ARC layer comprising a material different from the Group III-nitride material layer, wherein the ARC layer and the Group III-nitride material layer together form a dual layer anti-reflective coating for the solar cell, wherein the interfacial layer is a silicon-rich amorphous silicon layer and has a thickness approximately in the range of 30-50 Angstroms, and wherein the ARC layer is a layer selected from the group consisting of an aluminum oxide (AlO x , x is equal to or less than 1.5) layer and a silicon oxynitride (SiO y N z , y>0, z>0) layer.
15. A solar cell, comprising:
a substrate having a light-receiving surface;
a passivating dielectric layer disposed on the light-receiving surface of the substrate;
a Group III-nitride material layer disposed above the passivating dielectric layer, wherein the Group III-nitride material layer comprises gallium; and
an interfacial layer disposed directly between the passivating dielectric layer and the Group III-nitride material layer, the interfacial layer comprising a material different from the passivating dielectric layer and different from the Group III-nitride material layer, wherein the interfacial layer is a silicon-based layer with no oxygen, the layer selected from the group consisting of silicon-rich amorphous silicon, intrinsic or phosphorus doped amorphous silicon, and polycrystalline silicon, and wherein the silicon-based layer has a thickness approximately in the range 10-200 Angstroms.
16. The solar cell of claim 15 , wherein the Group III-nitride material layer is disposed on the passivating dielectric layer.
17. The solar cell of claim 15 , wherein the Group III-nitride material layer is selected from the group consisting of an aluminum gallium nitride (Al x Ga 1-x N, where 0<x<1) layer, and a gallium nitride (GaN) layer.
18. The solar cell of claim 15 , further comprising:
an anti-reflective coating (ARC) layer disposed on the Group III-nitride material layer, the ARC layer comprising a material different from the Group III-nitride material layer.
19. The solar cell of claim 18 , wherein the ARC layer is a layer selected from the group consisting of an aluminum oxide (AlO x , x is equal to or less than 1.5) layer and a silicon oxynitride (SiO y N z , y>0, z>0) layer, and wherein the ARC layer and the Group III-nitride material layer together form a dual layer anti-reflective coating for the solar cell.
20. The solar cell of claim 19 , wherein the Group III-nitride material layer has a thickness approximately in the range of 50-900 Angstroms and has an index of refraction of approximately 2.0-2.4, and wherein the ARC layer has a thickness approximately in the range of 300-1500 Angstroms and has an index of refraction of approximately 1.8.