IP Library Granted Patent US 9,544,987
Granted Patent B2
US 9,544,987 · App. 14/320,268 · Granted Jan 10, 2017

Frequency tuning for pulsed radio frequency plasma processing

Inventors: Michael Mueller (Loveland, CO); Myeong Yeol Choi (Fort Collins, CO)
Assignee: Advanced Energy Industries, Inc.
H05H1/46H01J37/3299H01J37/32155H01J37/32174H01J37/32183H01J37/32926H05H2001/4645H05H2001/4682
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Quick Facts
Patent No.
US 9,544,987
App. No.
14/320,268
Granted
Jan 10, 2017
Kind
B2
Abstract

This disclosure describes systems, methods, and apparatus for pulsed RF power delivery to a plasma load for plasma processing of a substrate. In order to maximize power delivery, a calibration phase using a dummy substrate or no substrate in the chamber, is used to ascertain a preferred fixed initial RF frequency for each pulse. This fixed initial RF frequency is then used at the start of each pulse during a processing phase, where a real substrate is used and processed in the chamber.

Claims (36)

1. A method of selecting a fixed initial RF frequency for each of a plurality of RF pulses provided to a plasma load, the method comprising:

providing pulsed RF power to a plasma load, where each pulse comprises RF power having a controllable frequency, and where a plasma having the plasma load interacts with a dummy substrate, or no substrate, in a plasma chamber;

tuning an initial RF frequency for each pulse in a string of pulses, pulse to pulse, in a calibration process, by minimizing a difference between a characteristic indicative of the pulsed RF power at a start of each pulse and a desired characteristic of the pulsed RF power at a start of each pulse until the difference between the characteristic for a start to two consecutive pulses is below a threshold; then

selecting the initial RF frequency as a fixed initial RF frequency for use in a processing run using a real substrate; and

tuning the RF frequency during processing within each pulse but returning to the fixed initial RF frequency at a start of each pulse.

2. The method of claim 1 , wherein the characteristic indicative of the pulsed RF power is reflected power.

3. The method of claim 1 , wherein the characteristic indicative of the pulsed RF power is load impedance power.

4. The method of claim 1 , wherein the characteristic indicative of the pulsed RF power is a density of the plasma.

5. The method of claim 1 , wherein the processing run includes providing pulsed RF power to the plasma load where an initial RF frequency at a start of each pulse is set to the fixed initial RF frequency.

6. A non-transitory, tangible computer readable storage medium, encoded with processor readable instructions to perform a method for frequency tuning a power source to optimize delivered power to a plasma load, the method comprising:

in a calibration phase,

tuning an initial RF frequency at a start of each pulse in a string of RF pulses, pulse to pulse, until a difference between a characteristic indicative of power at the start of each pulse and a desired characteristic of the power at the start of each pulse, for a start to two consecutive pulses, is below a threshold; then

selecting the initial RF frequency as a fixed initial RF frequency to be used during a processing phase; and

in the processing phase,

setting an initial RF frequency for all pulses in the processing phase equal to the fixed initial RF frequency selected during the calibration phase; and

tuning the RF frequency of pulsed RF power during each pulse, but returning to the fixed initial RF frequency at a start of each pulse.

7. The non-transitory, tangible computer readable storage medium of claim 6 , wherein the characteristic indicative of the pulsed RF power is reflected power.

8. The non-transitory, tangible computer readable storage medium of claim 6 , wherein the characteristic indicative of the pulsed RF power is load impedance power.

9. The non-transitory, tangible computer readable storage medium of claim 6 , wherein the characteristic indicative of the pulsed RF power is a density of the plasma.

10. A power delivery system comprising:

a power source configured to provide pulsed RF power to a plasma load via a matching network;

a sensor configured to sample a characteristic indicative of the pulsed RF power;

a controller in communication with the sensor and the power source and executable to:

in a calibration phase,

tuning an initial RF frequency at a start of each pulse in a string of RF pulses, pulse to pulse, until a difference between a characteristic indicative of power at the start of each pulse and a desired characteristic of the power at the start of each pulse, for a start to two consecutive pulses, is below a threshold; then

selecting the initial RF frequency as a fixed initial RF frequency to be used during a processing phase; and

in the processing phase,

setting an initial RF frequency for all pulses in the processing phase equal to the fixed initial RF frequency selected during the calibration phase; and

tuning the RF frequency of pulsed RF power during each pulse, but returning to the fixed initial RF frequency at a start of each pulse.

11. The power delivery system of claim 10 , wherein the sensor is a reflected power sensor.

12. The power delivery system of claim 11 , wherein the sensor is a directional coupler.

13. The power delivery system of claim 10 , wherein the sensor is a delivered power sensor.

14. The power delivery system of claim 10 , wherein the sensor is an impedance sensor.

15. The power delivery system of claim 10 , wherein the sensor is a plasma density sensor.

16. The power delivery system of claim 10 , wherein the power source is in communication with a switching circuit that converts RF power from the power source to the pulsed RF power.

17. The power delivery system of claim 10 , wherein the sensor is part of an oscilloscope.

Assignments (5)
CORRECTIVE ASSIGNMENT TO CORRECT THE TWO PROPERTY NUMBERS PREVIOUSLY RECORDED AT REEL: 043985 FRAME: 0745. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Jul 24, 2018
From: ADVANCED ENERGY INDUSTRIES, INC.
To: AES GLOBAL HOLDINGS, PTE. LTD
Reel/Frame 047250/0238 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 31, 2017
From: ADVANCED ENERGY INDUSTRIES, INC.
To: AES GLOBAL HOLDINGS, PTE. LTD.
Reel/Frame 043991/0203 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 30, 2017
From: ADVANCED ENERGY INDUSTRIES, INC.
To: AES GLOBAL HOLDINGS, PTE. LTD.
Reel/Frame 043985/0745 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 3, 2016
From: CHOI, MYEONG YEOL
To: ADVANCED ENERGY INDUSTRIES, INC.
Reel/Frame 039926/0456 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 1, 2014
From: MUELLER, MICHAEL; CHOI, SAM
To: ADVANCED ENERGY INDUSTRIES, INC.
Reel/Frame 033220/0679 →
Continuity (1)
Related Publication 20150382442A1 · Dec 31, 2015