White emitting light source and luminescent material
View Patent ↗The invention relates to a white emitting light source with an improved luminescent material of the formula (AEN2/3)*b (MN)*c (SiN4/3)*d1 CeO3/2*d2 EuO*x SiO2*y AlO3/2 wherein AE is an alkaline earth metal chosen of the group of Ca, Mg, Sr and Ba or mixtures thereof and M is a trivalent element chosen of the group of Al, B, Ga, Sc with d1>10*d2. In combination with a UV to blue light generating device this material leads to an improved light quality and stability, especially an improved temperature stability for a wide range of applications.
1. A device comprising:
a luminescent material comprising:
(AEN 2/3 )*b (MN)*c (SiN 4/3 )*d 1 CeO 3/2 *d 2 EuO*xSiO 2 *yAlO 3/2 wherein AE is an alkaline earth metal chosen from a group consisting of Ca, Mg, Sr and Ba or mixtures thereof and M is a trivalent element chosen from a group consisting of Al, B, Ga, Sc or mixtures thereof, wherein
0.95≦2*( a+d 1 +d 2 )/( b+c+x+y )≦1.2
a+d 1 +d 2 ≧c+x,
( b+y ):( c+x )≧1,
( b+y )≦1+10* d 1 ,
b≧ 5* y,
c≧ 10* x,
0.0001≦ d 1 ≦0.2 and d 1 ≧10* d 2 ; and
at least one flux.
2. The device of claim 1 wherein the luminescent material is ≧95% (AEN 2/3 )*b (MN)*c (SiN 4/3 )*d 1 CeO 3/2 *d 2 EuO*xSiO 2 *yAlO 3/2 .
3. The device of claim 1 wherein the at least one flux comprises an alkaline earth material.
4. The device of claim 1 wherein the at least one flux comprises an alkaline material.
5. The device of claim 1 wherein the at least one flux comprises one of a metal oxide and a fluoride.
6. The device of claim 1 wherein the at least one flux comprises one of SiON, SiAlON, and SiO 2 .
7. The device of claim 1 wherein (b+y):(c+x) is ≧1.01 and ≦1.20.
8. The device of claim 1 wherein (b+y) is ≦1+10*d 1 .
9. The device of claim 1 wherein b≧5*y and c≧10*x.
10. The device of claim 1 further comprising a light source configured to emit light having a wavelength between 400 nm and 480 nm, wherein the luminescent material is positioned to absorb light emitted by the light source.
11. A device comprising:
a blue LED comprising an n-GaN layer; and
a ceramic plate attached to the blue LED, the ceramic plate comprising a luminescent material, the luminescent material comprising (AEN 2/3 )*b (MN)*c (SiN 4/3 )*d 1 CeO 3/2 *d 2 EuO*xSiO 2 *yAlO 3/2 wherein AE is an alkaline earth metal chosen from a group consisting of Ca, Mg, Sr and Ba or mixtures thereof and M is a trivalent element chosen from a group consisting of Al, B, Ga, Sc or mixtures thereof, wherein
0.95≦2*( a+d 1 +d 2 )/( b+c+x+y )≦1.2
a+d 1 +d 2 ≧c+x,
( b+y ):( c+x )≧1,
( b+y )≦1+10* d 1 ,
b≧ 5* y,
c≧ 10* x,
0.0001≦ d 1 ≦0.2 and d 1 ≧10* d 2 .
12. The device of claim 11 wherein the n-GaN layer is optically coupled to the ceramic plate by a transparent glue.
13. The device of claim 12 wherein the transparent glue is silicone.
14. The device of claim 11 wherein a surface of the n-GaN layer facing the ceramic plate is roughened.
15. The device of claim 14 wherein the ceramic plate forms a rigid mechanical protection for the roughened n-GaN surface.
16. The device of claim 11 wherein a full width half maximum of an emission spectrum of the luminescent material is ≧120 nm.
17. The device of claim 11 wherein the emission spectrum of the luminescent material comprises:
an emission maximum in a wavelength range between 500 and 600 nm having a full width half maximum of ≧80 nm; and
an emission maximum in a wavelength range between 600 and 650 nm having a full width half maximum of ≧30 and ≦140 nm.
18. The device of claim 11 wherein ceramic plate has a density ≧90% of a theoretical density.
19. The device of claim 11 wherein the ceramic plate comprises a main constituent and pores; the ceramic plate has a volume density larger than 90 percent of the main constituent; and the main constituent is more than 80 percent single crystal domains.
20. The device of claim 11 wherein combined light comprising light emitted by the blue LED and light emitted by the luminescent material has a correlated color temperature between 3000 and 4000 K.