HIGH-THROUGHPUT THERMAL PROCESSING METHODS FOR PRODUCING HIGH-EFFICIENCY CRYSTALLINE SILICON SOLAR CELLS
A method for thermal processing of a silicon substrate wherein first a silicon substrate is heated to an idle load temperature in the range of approximately 700° to 900° C. The silicon substrate is then heated to a temperature in the range of approximately 975° to 1200° C. in less than approximately 20 minutes. After thermal processing, the silicon substrate is cooled to an idle unload temperature in the range of approximately 700° to 900° C. in less than approximately 20 minutes.
1 . A method for thermal processing of a silicon substrate, the method comprising:
heating a silicon substrate in a furnace to an idle load temperature in the range of approximately 700° to 900° C.;
heating said silicon substrate in said furnace to a temperature in the range of approximately 975° to 1200° C. in less than approximately 20 minutes; and
cooling the temperature of said silicon substrate to an idle unload temperature in the range of approximately 700° to 900° C. in less than approximately 20 minutes.
2 . The method of claim 1 , wherein said idle load and unload temperatures are in the range of approximately 800° to 850° C.
3 . The method of claim 1 , wherein said processing of said silicon substrate in said furnace is at a temperature in the range of approximately 975° to 1200° C.
4 . The method of claim 1 , wherein said silicon substrate is a crystalline silicon substrate.
5 . The method of claim 1 , wherein said silicon substrate is a monocrystalline silicon substrate.
6 . The method of claim 1 , wherein said silicon substrate is a multi-crystalline silicon substrate.
7 . The method of claim 1 , wherein said processing of said silicon substrate in said furnace is a thermal anneal process.
8 . The method of claim 1 , further comprising depositing at least one dopant-containing material on a least a portion of the surface of said silicon substrate before said heating of said silicon substrate in a furnace to said idle load temperature.
9 . The method of claim 8 , wherein said processing of said silicon substrate in said furnace is a thermal process for dopant drive-in.
10 . The method of claim 8 , wherein said processing of said silicon substrate in said furnace is a thermal process for surface passivation.
11 . The method of claim 1 , wherein said heating of said silicon substrate and said cooling the temperature of said silicon substrate is performed in the presence of an ambient gas.
12 . The method of claim 11 , wherein said ambient gas is nitrogen.
13 . The method of claim 11 , wherein said ambient gas comprises a combination of an inert gas and an oxidizing ambient.
14 . The method of claim 1 , wherein said silicon substrate is a CZ wafer.
15 . The method of claim 1 , further comprising a second processing of said silicon substrate at a temperature greater than 1200° C. before said cooling the temperature of said silicon substrate to an idle unload temperature.
16 . The method of claim 1 , wherein said furnace is a batch tube furnace.
17 . The method of claim 1 , wherein said furnace is an in-line furnace.
18 . A method for thermal processing of a silicon substrate, the method comprising:
depositing dopant on a least a portion of the surface of a CZ monocrystalline silicon substrate;
heating said CZ monocrystalline silicon substrate in a furnace to an idle load temperature in the range of approximately 800° to 850° C.;
heating said CZ monocrystalline silicon substrate in said furnace at a temperature in the range of approximately 1000° to 1100° C. to drive in dopants and passivate the surface of said CZ monocrystalline silicon substrate in less than approximately 20 minutes; and
cooling the temperature of said CZ monocrystalline silicon substrate to an idle unload temperature in the range of approximately 800° to 850° C. in less than approximately 20 minutes.
19 . The method of claim 18 , wherein said heating of said CZ monocrystalline silicon substrate and said cooling the temperature of said CZ monocrystalline silicon substrate is performed in the presence of an ambient gas.
20 . The method of claim 19 , wherein said ambient gas is nitrogen.
21 . The method of claim 19 , wherein said ambient gas comprises a combination of an inert gas and an oxidizing ambient.
22 . A method for suppression of silicon oxide precipitates and preventing degradation of bulk minority carrier lifetime during thermal processing of a silicon substrate for solar cell fabrication, the method comprising:
loading said silicon substrate into a batch tube furnace with an idle load temperature in the range of approximately 700 degrees to 900 degrees C.;
heating said silicon substrate in said furnace to a temperature in the range of approximately 975 degrees to 1200 degrees C. in less than approximately 20 minutes and annealing said silicon substrate at such temperature for at least several minutes;
cooling the temperature is said silicon substrate to an idle unload temperature in the range of approximately 700 degrees to 900 degrees C. in less than approximately 20 minutes; and
unloading said silicon wafer from said batch tube furnace.