Monolithic composite III-nitride transistor with high voltage group IV enable switch
View Patent ↗There are disclosed herein various implementations of a monolithically integrated component. In one exemplary implementation, such a monolithically integrated component includes an enhancement mode group IV transistor and two or more depletion mode III-Nitride transistors. The enhancement mode group IV transistor may be implemented as a group IV insulated gate bipolar transistor (group IV IGBT). One or more of the III-Nitride transistor(s) may be situated over a body layer of the group IV IGBT, or the III-Nitride transistor(s) may be situated over a collector layer of the IGBT.
1. A monolithically integrated component comprising:
an enhancement mode group IV transistor; and
at least two depletion mode III-Nitride transistors;
at least one of said at least two depletion mode III-Nitride transistors substantially overlying said enhancement mode group IV transistor.
2. The monolithically integrated component of claim 1 , wherein said enhancement mode group IV transistor comprises a silicon insulated gate bipolar transistor (silicon IGBT).
3. The monolithically integrated component of claim 2 , further comprising:
a body layer of said enhancement mode group IV IGBT having an emitter and a gate therein;
a drift, layer of said enhancement mode group IV IGBT;
a collector layer of said enhancement mode group IV IGBT having a collector therein;
wherein said at least two depletion mode III-Nitride transistors are situated over said body layer of said enhancement mode group IV IGBT;
and wherein said emitter and said gate of said enhancement mode group IV IGBT are situated on a top side of said monolithically integrated component.
4. The monolithically integrated component of claim 2 , further comprising:
a body layer of said enhancement mode group IV IGBT having an emitter and a gate therein;
a drift layer of said enhancement mode group IV IGBT;
a collector layer of said enhancement mode group IV IGBT having a collector therein;
wherein said at least two depletion mode III-Nitride transistors are situated over said collector layer of said enhancement mode group IV IGBT;
and wherein said collector of said enhancement mode group IV IGBT is situated on a top side of said monolithically integrated component.
5. The monolithically integrated component of claim 1 , wherein said enhancement mode group IV transistor comprises a silicon field-effect transistor (silicon PET).
6. The monolithically integrated component of claim 1 , wherein said at least two depletion mode III-Nitride transistors comprise III-Nitride FETs.
7. The monolithically integrated component of claim 1 , wherein said at least two depletion mode HI-Nitride transistors comprise III-Nitride high electron mobility transistors (III-Nitride HEMTs).
8. The monolithically integrated component of claim 1 , wherein said at least two depletion mode III-Nitride transistors comprise a III-Nitride transition layer.
9. The monolithically integrated component of claim 8 , further comprising a III-Nitride nucleation layer, said III-Nitride transition layer being formed over said III-Nitride nucleation layer.
10. The monolithically integrated component of claim 1 , wherein said at least two depletion mode III-Nitride transistors form a power conversion circuit.
11. The monolithically integrated component of claim 10 , wherein said enhancement mode group IV transistor comprises a FET.
12. The monolithically integrated component of claim 10 , wherein said enhancement mode group IV transistor comprises an IGBT.
13. The monolithically integrated component of claim 1 , wherein said at least two depletion mode III-Nitride transistors form at least one half bridge circuit.
14. The monolithically integrated component of claim 13 , wherein said at least one half bridge circuit is configured as a power conversion circuit.
15. The monolithically integrated component of claim 1 , wherein monolithic integration is based on III-Nitride epitaxial layers formed on a silicon substrate.
16. The monolithically integrated component of claim 15 , wherein said enhancement mode group IV transistor is situated on and/or within said silicon substrate.
17. The monolithically integrated component of claim 1 , wherein said enhancement mode group IV transistor is configured as an enable switch.
18. The monolithically integrated component of claim 1 , wherein at least one of said at least two depletion mode III-Nitride transistors is electrically connected to said enhancement mode group IV transistor using at least one interconnect via.
19. The monolithically integrated component of claim 1 , wherein at least one of said at least two depletion mode III-Nitride transistors further comprises an insulated gate electrode.
20. The monolithically integrated component of claim 1 , wherein at least one of said at least two depletion mode III-Nitride transistors is electrically connected to said enhancement mode group IV transistor using at least one through substrate via.