Power semiconductor package with multiple dies

1. A semiconductor package comprising:

a first power semiconductor die that includes a first electrode on a surface thereof;

a second power semiconductor die that includes a first electrode on a surface thereof;

a support plate having a first surface and a second surface opposite said first surface;

an insulation body disposed on said first surface of said support plate; and

a plurality of laterally spaced conductive pads on said insulation body, a first one of said conductive pads including a first region electrically and mechanically coupled to said first electrode of said first semiconductor die with a conductive adhesive body interposed between said first electrode and said first region and a second region readied for connection using a conductive adhesive body to a conductive pad external to said package, and a second one of said conductive pads including a first region electrically and mechanically coupled to said first electrode of said second semiconductor die with a conductive adhesive body interposed between said first electrode and said first region and a second region readied for connection using a conductive adhesive body to a conductive pad external to said package.

2. The package of claim 1 , wherein each said first and second semiconductor die includes a second electrode lateral to said first electrode on said first surface thereof, each said second electrode being electrically and mechanically coupled to a first region of a respective conductive pad with a conductive adhesive body interposed between said second electrode and said first region of said respective conductive pad, each respective conductive pad including a second region readied for connection using a conductive adhesive body to a conductive pad external to said package.

3. The package of claim 1 , wherein each said first and second semiconductor die includes a third electrode on another opposing surface thereof.

4. The package of claim 3 , wherein each said third electrode is readied for connection using a conductive adhesive body to a conductive pad external to said package.

5. The package of claim 1 , further comprising another insulation body between said insulation body and said support plate, a plurality of metallic input/output tracks on said another insulation body, and an IC die to operate said first power semiconductor die coupled to said input/output tracks, wherein at least one input/output track is electrically coupled to a respective second electrode, and at least one input/output track is electrically coupled to a respective pad having a region readied for electrical and mechanical connection to a pad external to said package using a conductive adhesive body.

6. The package of claim 1 , further comprising another insulation body on said second surface of said support plate, a plurality of metallic input/output tracks on said another insulation body, and an IC die to operate said second power semiconductor die coupled to said input/output tracks, wherein at least one input/output track is electrically coupled to a respective second electrode, and at least one input/output track is electrically coupled to a respective pad having a region readied for electrical and mechanical connection to a pad external to said package using a conductive adhesive body.

7. The package of claim 1 , wherein said support plate is metallic.

8. A semiconductor package comprising:

a first power semiconductor die having a first electrode;

a second power semiconductor die having a first electrode;

a support plate and an insulation body disposed on said support plate;

a first conductive pad including a first region electrically and mechanically coupled to said first electrode of said first power semiconductor die with a first conductive adhesive body interposed between said first electrode of said first power semiconductor die and said first region and a second region readied for connection using a second conductive adhesive body;

a second conductive pad including a first region electrically and mechanically coupled to said first electrode of said second power semiconductor die with a first conductive adhesive body interposed between said first electrode of said second power semiconductor die and said first region and a second region readied for connection using a second conductive adhesive body.

9. The semiconductor package of claim 8 , wherein each said first and second power semiconductor die includes a second electrode lateral to said first electrode.

10. The semiconductor package of claim 8 , wherein each said first and second power semiconductor die includes a third electrode.

11. The semiconductor package of claim 10 , wherein each said third electrode is readied for connection using a conductive adhesive body to a conductive pad external to said package.

12. The semiconductor package of claim 8 , wherein said support plate is metallic.

13. The semiconductor package of claim 8 further comprising another insulation body between said insulation body and said support plate, a plurality of metallic input/output tracks on said another insulation body, and an IC die to operate said first power semiconductor die coupled to said input/output tracks.

14. The semiconductor package of claim 8 further comprising another insulation body between said insulation body and said support plate, a plurality of metallic input/output tracks on said another insulation body, and an IC die to operate said second power semiconductor die coupled to said input/output tracks.

15. The semiconductor package of claim 8 further comprising another insulation body between said insulation body and said support plate, a plurality of metallic input/output tracks on said another insulation body, and an IC die to operate said first and second power semiconductor dies coupled to said input/output tracks.