An LED array having N light-emitting diode units (N≧3) comprises a permanent substrate, a bonding layer on the permanent substrate, a second conductive layer on the bonding layer, a second isolation layer on the second conductive layer, a crossover metal layer on the second isolation layer, a first isolation layer on the crossover metal layer, a conductive connecting layer on the first isolation layer, an epitaxial structure on the conductive connecting layer, and a first electrode layer on the epitaxial structure. The light-emitting diode units are electrically connected with each other by the crossover metal layer.
1. A light-emitting diode structure comprising:
a first light-emitting diode unit;
a second light-emitting diode unit separated from the first light-emitting diode unit and
a crossover metal layer comprising a first portion protruding into the first light-emitting diode unit, a flat portion connected to the second light-emitting diode unit and having a first width substantially equal to a width of the second light-emitting diode unit and a connecting portion connecting the first portion with the flat portion.
2. The light-emitting diode structure of claim 1 , further comprising a conductive connecting layer surrounding the first portion.
3. The light-emitting diode structure of claim 2 , further comprising a first isolation layer arranged between the conductive connecting layer and the first portion.
4. The light-emitting diode structure of claim 1 , further comprising a second isolation layer having a second width substantially equal to a width of the light emitting diode structure.
5. The light-emitting diode structure of claim 1 , further comprising an electrode connected to the second light-emitting diode unit on a side opposite to the flat portion.
6. The light-emitting diode structure of claim 1 , wherein the crossover metal layer further comprises a second portion protruding into the first light-emitting diode unit and separated from the first portion.
7. The light-emitting diode structure of claim 6 , wherein the first light-emitting diode unit further comprises a semiconductor layer which is connected to the first portion and the second portion.
8. The light-emitting diode structure of claim 1 , further comprising a third light-emitting diode unit separated from the first light-emitting diode unit and the second light-emitting diode unit.
9. The light-emitting diode structure of claim 8 , further comprising a substrate disposed on a side of the crossover metal layer opposite to the first light-emitting diode unit.
10. The light-emitting diode structure of claim 1 , further comprising a roughened surface on top surfaces of the first light-emitting diode unit and the second light-emitting diode unit.