Photopatternable materials and related electronic devices and methods

1. An optical, electronic or optoelectronic device comprising a thin film transistor, the thin film transistor comprising:

a substrate;

a metal oxide semiconductor layer;

source and drain electrodes in contact with the metal oxide semiconductor layer;

a gate electrode;

a gate dielectric layer disposed between the metal oxide semiconductor layer and the gate electrode, the gate dielectric layer being in contact with a first surface of the metal oxide semiconductor layer; and

an organic layer in contact with a second surface of the metal oxide semiconductor layer; wherein at least one of the gate dielectric layer and the organic layer comprises a crosslinked product of a polymer having the formula:

wherein:

U and U′, at each occurrence, independently are selected from the group consisting of a halogen, CN, a C 1-6 alkyl group, and a C 1-6 haloalkyl group;

W and W′ independently are —Ar[—Y—Ar] q —, wherein:

Ar, at each occurrence, independently is a divalent C 6-18 aryl group;

Y, at each occurrence, independently is selected from the group consisting of O, S, S(O) 2 —, —(CR′R″) r —, —C(O)—, and a covalent bond, wherein R′ and R″, at each occurrence, independently are selected from the group consisting of H, a halogen, CN, a C 1-10 alkyl group, and a C 1-10 haloalkyl group; and r is selected from 1, 2, 3, 4, 5, 6, 7, 8, 9 and 10; and

q is selected from 0, 1, 2, 3, 4, 5, 6, 7, 8, 9 and 10;

Z and Z′ independently are selected from the group consisting of —O—, —S—, and —Se—;

L and L′, at each occurrence, independently are selected from the group consisting of —O—, —S—, a divalent C 1-10 alkyl group, a divalent C 6-18 aryl group, and a covalent bond;

T and T′, at each occurrence, independently are Q or R, wherein:

Q is a crosslinkable group comprising an ethenyl moiety, an ethynyl moiety, a dienyl moiety, an acrylate moiety, a coumarinyl moiety, an epoxy moiety, or a combination thereof; and

R is selected from the group consisting of H, a halogen, a C 1-10 alkyl group, a C 1-10 haloalkyl group, and a C 6-10 aryl group optionally substituted with 1 to 5 substituents independently selected from the group consisting of a halogen and CN, provided that W comprises at least one -L-T group that is -L-Q;

p is 1, 2, 3, 4, 5, 6, 7 or 8;

p′ is 0, 1, 2, 3, 4, 5, 6, 7 or 8;

x and x′ independently are 0, 1, 2, 3 or 4;

m is a real number, wherein 0<m≦1; and

n is an integer ranging from 10 to 500.

2. The device of claim 1 , wherein the metal oxide semiconductor layer comprises indium gallium zinc oxide.

3. The device of claim 1 , wherein the organic layer functions as an etch-stop layer or a passivation layer.

4. The device of claim 1 , wherein U and U′, at each occurrence, independently are selected from the group consisting of F, Cl, CH 3 , and CF 3 ; and x and x′, at each occurrence, independently are 0, 1, 2 or 4.

5. The device of claim 1 , wherein the polymer has the formula:

6. The device of claim 4 , wherein at least one of x is not 0.

7. The device of claim 1 , wherein the polymer has the formula:

8. The device of claim 1 , wherein Z and Z′ are O or S.

9. The device of claim 8 , wherein W and W′ are selected from:

10. The device of claim 1 , wherein the polymer is a homopolymer of a repeat unit selected from the group consisting of:

11. The device of claim 10 , wherein Q is selected from the group consisting of:

wherein R 1 is H or a C 1-20 alkyl group.

12. The device of claim 1 , wherein the polymer is a homopolymer of a repeat unit selected from the group consisting of:

13. The device of claim 1 , wherein m<1, and wherein the polymer is a copolymer of the repeat units

which are different and independently are selected from the group consisting of:

wherein each -L-Q group independently is selected from the group consisting of:

wherein R 1 is H or a C 1-20 alkyl group.

14. The device of claim 1 , wherein the polymer is a copolymer of:

wherein x is 0 or 4.

15. The device of claim 1 , wherein the polymer is a copolymer of: