System and method for balancing consumption of targets in pulsed dual magnetron sputtering (DMS) processes
A sputtering system and method are disclosed. The system has at least one dual magnetron pair having a first magnetron and a second magnetron, each magnetron configured to support target material. The system also has a DMS component having a DC power source in connection with switching components and voltage sensors. The DMS component is configured to independently control an application of power to each of the magnetrons, and to provide measurements of voltages at each of the magnetrons. The system also has one or more actuators configured to control the voltages at each of the magnetrons using the measurements provided by the DMS component. The DMS component and the one or more actuators are configured to balance the consumption of the target material by controlling the power and the voltage applied to each of the magnetrons, in response to the measurements of voltages at each of the magnetrons.
1. A sputtering system comprising:
at least one dual magnetron pair comprising a first magnetron and a second magnetron, each magnetron of the dual magnetron pair configured to support target material;
a dual magnetron sputtering (DMS) component comprising a DC power source in connection with a plurality of switching components and a plurality of voltage sensors, the DMS component configured to independently control an application of power to each of the magnetrons, and to provide measurements of voltages at each of the magnetrons; and
one or more actuators configured to control the voltages at each of the magnetrons using the measurements provided by the DMS component;
wherein the DMS component and the one or more actuators are configured to balance the consumption of the target material by controlling the power and the voltage applied to each of the magnetrons, in response to the measurements of voltages at each of the magnetrons.
2. The system of claim 1 , wherein the one or more actuators include one or more of:
gas flow control means to control the flow of reactive gas to one magnetron relative to the other magnetron; and
rotation components to control the rotation speed of each magnetron.
3. The sputtering system of claim 1 , comprising:
at least one stationary substrate.
4. The sputtering system of claim 1 , comprising:
at least one secondary gas manifold; and
at least one gas flow controller; wherein
the at least one secondary gas manifold and the at least one gas flow controller are configured to modify a flow of a reactive gas to one magnetron relative to a flow of a reactive gas to the other magnetron.
5. The sputtering system of claim 1 , wherein:
the DMS component is configured to match a first burning voltage of the first magnetron to a second burning voltage of the second magnetron.
6. The sputtering system of claim 5 , wherein:
the DMS component is configured to calculate the first burning voltage based on an average voltage of the first magnetron measured between a first end boost period and a first turn-off period; and
the DMS component is configured to calculate the second burning voltage based on an average voltage of the second magnetron measured between a second end boost period and a second turn-off period.
7. The sputtering system of claim 5 , wherein:
the DMS component is configured to calculate a process voltage.
8. The sputtering system of claim 1 , wherein:
the DMS component is configured to modify the flow of reactive gas to the second magnetron relative to the first magnetron.
9. The sputtering system of claim 1 , wherein:
the DMS component is configured to adjust a rotation speed of at least one of the first magnetron and the second magnetron.
10. The sputtering system of claim 1 , comprising:
switching components configured to receive DC power and apply pulsed-DC power to each of the first magnetron and the second magnetron;
voltage measurement components to provide measurements of voltages at each of the magnetrons to enable the actuators to control the application of voltages to the magnetrons; and wherein
the DMS component is configured to control the switching components to balance an application of power to each of the at least two magnetrons.
11. A dual magnetron sputtering (DMS) supply comprising:
switching components configured to receive DC power and apply pulsed-DC power to each of at least two magnetrons;
a control portion configured to control the switching components to balance an application of power to each of the at least two magnetrons; and
voltage measurement components to provide measurements of voltages at each of the magnetrons to enable actuators to control the application of voltages to the magnetrons.
12. The DMS supply of claim 11 including:
a DC supply to provide the DC power.
13. The DMS supply of claim 12 including:
control outputs to provide control signals to one or more actuators based upon the measurements of voltages.
14. The DMS supply of claim 13 , wherein the control outputs include one or more of:
a control output to control a gas flow controller that controls a flow of reactive gas to one magnetron relative to the other magnetron; and
a control output to control a rotation speed of at least one of the magnetrons.