Light-emitting element and the manufacturing method of the same
View Patent ↗The present application discloses a light-emitting element comprising a semiconductor light-emitting stack emitting a first light which has a first color coordinate, a first wavelength conversion material on the semiconductor light-emitting stack converting the first light to emit a second light, and a second wavelength conversion material on the first wavelength conversion material converting the second light to emit a third light. The first light and the second light are mixed to be a fourth light having a second color coordinate. The third light and the fourth light are mixed to be a fifth light having a third color coordinate, and the second color coordinate locates at the top right of the first color coordinate and the third color coordinate locates at the top right of the second color coordinate.
1. A light-emitting element, comprising:
a semiconductor light-emitting stack for generating a first light in a wavelength of blue color which has a first chromaticity coordinate;
a first wavelength conversion material formed on the semiconductor light-emitting stack and converting the first light to a second light; and
a second wavelength conversion material formed on the first wavelength conversion material and converting the first light to a third light;
wherein the first light and the second light are mixed to be a fourth light having a second chromaticity coordinate,
wherein the third light and the fourth light are mixed to be a fifth light having a third chromaticity coordinate, and the second chromaticity coordinate locates at the top right of the first chromaticity coordinate and the third chromaticity coordinate locates at the top right of the second chromaticity coordinate, and
wherein the second chromaticity coordinate is directed to a color temperature less than the first chromaticity coordinate.
2. The element of claim 1 , wherein the second chromaticity coordinate locates within a first range of (a 0 ×(1±b 0 %), c 0 ×(1±d 0 %)), and (a 0 ,b 0 ,c 0 ,d 0 )=(0.31, 32, 0.14, 57).
3. The element of claim 1 , wherein the third chromaticity coordinate locates within a second range of (a×(1±b %), c×(1±d %)), and (a,b,c,d)=(0.39, 24, 0.37, 19).
4. The element of claim 1 , wherein the fifth light has a color temperature between 2700 K ˜6500K.
5. The element of claim 1 , wherein the first chromaticity coordinate and the second chromaticity coordinate form a first line having a slope between 0.6˜0.76.
6. The element of claim 1 , wherein the second chromaticity coordinate and the third chromaticity coordinate form a second line having a slope between 1.3˜3.2.
7. The element of claim 1 , wherein the first light has a dominate wavelength within the wavelength range of 450 nm and about 490 nm, the second light has a dominate wavelength within the wavelength range of a red light, and the third light has a dominate wavelength within the wavelength range of a green light or a yellow light.
8. The element of claim 1 , wherein the second light has a wavelength range between about 620 nm and about 650nm.
9. The element of claim 1 , wherein the third light has a wavelength range between about 500 nm and about 570 nm.
10. The element of claim 1 , wherein the third chromaticity coordinate is directed to a color temperature greater than that of the second chromaticity coordinate.
11. A method of manufacturing a light-emitting element, comprising:
providing a semiconductor light-emitting stack for generating a first light in a wavelength of blue color, and the first light has a first chromaticity coordinate;
forming a first wavelength conversion material on the semiconductor light-emitting stack, and the first wavelength conversion material converts the first light to emit a second light; and
forming a second wavelength conversion material on the first wavelength conversion material, and the second wavelength conversion material converts the first light to emit a third light;
wherein the first light and the second light are mixed to be a fourth light having a second chromaticity coordinate,
wherein the third light and the fourth light are mixed to be a fifth light having a third chromaticity coordinate, and the second chromaticity coordinate locates at the top right of the first chromaticity coordinate and the third chromaticity coordinate locates at the top right of the second chromaticity coordinate, and
wherein the second chromaticity coordinate is directed to a color temperature less than the first chromaticity coordinate.
12. The method of claim 11 , further comprising forming a plurality of layers of the first wavelength conversion materials on the semiconductor light-emitting stack.
13. The method of claim 11 , wherein the second chromaticity coordinate locates within a first range and the third chromaticity coordinate locates within a second range, wherein an area ratio of the first range and the second range is not less than 1.5.