Methods and systems for electric field deposition of nanowires and other devices
Methods, systems, and apparatuses for nanowire deposition are provided. A deposition system includes an enclosed flow channel, an inlet port, and an electrical signal source. The inlet port provides a suspension that includes nanowires into the channel. The electrical signal source is coupled to an electrode pair in the channel to generate an electric field to associate at least one nanowire from the suspension with the electrode pair. The deposition system may include various further features, including being configured to receive multiple solution types, having various electrode geometries, having a rotatable flow channel, having additional electrical conductors, and further aspects.
1. A nanostructure deposition apparatus, comprising:
a bounding surface configured to receive a target panel configured to receive at least one nanowire;
a transport mechanism configured to convey the target panel over the bounding surface at a predetermined velocity; and
a plurality of panel processing zones, each panel processing zone being configured to perform a respective process to a portion of a surface of the target panel, at least one of the plurality of panel processing zones including a nanostructure deposition device;
wherein the transport mechanism is configured to convey the target panel through the plurality of panel processing zones;
wherein the nanostructure deposition device includes a plurality of nanowire injection ports configured to provide a nanowire suspension adjacent to the surface of the target panel; and
wherein the plurality of nanowire injection ports includes a first row of nanowire injection ports and a second row of nanowire injection ports, the first row and second row being parallel, and the first row being offset from the second row.
2. The nanostructure deposition apparatus of claim 1 , wherein the plurality of panel processing zones further includes a rinse zone.
3. The nanostructure deposition apparatus of claim 1 , wherein the plurality of panel processing zones further includes a drying zone.
4. The nanostructure deposition apparatus of claim 1 , wherein the plurality of panel processing zones further includes a repair zone.
5. The nanostructure deposition apparatus of claim 4 , wherein the plurality of panel processing zones further includes a second nanostructure deposition device and a rinse zone arranged in series following the repair zone.
6. The nanostructure deposition apparatus of claim 1 , wherein the nanostructure deposition device includes a nanowire ink injection port configured to provide a nanowire ink adjacent to the surface of the target panel, a solvent injection port configured to provide a solvent between the surface of the target panel and the bounding surface, and a solvent removal port configured to remove the solvent.
7. The nanostructure deposition apparatus of claim 2 , wherein the rinse zone includes a nanowire ink removal port configured to remove nanowire ink from adjacent to the surface of the target panel, and a solvent injection port configured to provide a solvent between the surface of the target panel and the bounding surface.
8. The nanostructure deposition apparatus of claim 7 , wherein a first gap between the bounding surface and the surface of the target panel is approximately 1 mm, and a second gap between the nanowire ink removal port and the surface of the target panel is in the range of 10 μm to 100 μm.
9. The nanostructure deposition apparatus of claim 2 , wherein the rinse zone includes a plurality of nanowire ink removal ports configured to remove nanowire ink from adjacent to the surface of the target panel, and a plurality of solvent injection ports configured to provide a solvent between the surface of the target panel and the bounding surface; and
wherein the plurality of nanowire ink removal ports includes a first row of nanowire ink removal ports and a second row of nanowire ink removal ports, the first row and second row being parallel, the first row being offset from the second row, and at least one of the solvent injection ports being positioned between the first row and the second row.
10. The nanostructure deposition apparatus of claim 1 , wherein the predetermined velocity is 10 mm/sec.
11. The nanostructure deposition apparatus of claim 1 , wherein the target panel comprises a plurality of electrode pairs on a surface of the target panel, each electrode pair being configured to receive at least one nanowire.
12. A nanostructure deposition apparatus, comprising:
a bounding surface configured to receive a target panel configured to receive at least one nanowire;
a transport mechanism configured to convey the target panel over the bounding surface at a predetermined velocity; and
a plurality of panel processing zones, each panel processing zone being configured to perform a respective process to a portion of a surface of the target panel, at least one of the plurality of panel processing zones including a nanostructure deposition device, and at least one of the plurality of panel processing zones including a rinse zone that includes a plurality of nanowire ink removal ports configured to remove nanowire ink from adjacent to the surface of the target panel and a plurality of solvent injection ports configured to provide a solvent between the surface of the target panel and the bounding surface, wherein the plurality of nanowire ink removal ports includes a first row of nanowire ink removal ports and a second row of nanowire ink removal ports, the first row and second row being parallel, the first row being offset from the second row, and at least one of the solvent injection ports being positioned between the first row and the second row;
wherein the transport mechanism is configured to convey the target panel through the plurality of panel processing zones.
13. The nanostructure deposition apparatus of claim 12 , wherein the plurality of panel processing zones further includes a drying zone.
14. The nanostructure deposition apparatus of claim 12 , wherein the plurality of panel processing zones further includes a repair zone.
15. The nanostructure deposition apparatus of claim 12 , wherein the nanostructure deposition device includes a nanowire ink injection port configured to provide a nanowire ink adjacent to the surface of the target panel, a solvent injection port configured to provide a solvent between the surface of the target panel and the bounding surface, and a solvent removal port configured to remove the solvent.
16. A nanostructure deposition apparatus, comprising:
a bounding surface configured to receive a target panel configured to receive at least one nanowire;
a transport mechanism configured to convey the target panel over the bounding surface at a predetermined velocity; and
a plurality of panel processing zones, each panel processing zone being configured to perform a respective process to a portion of a surface of the target panel, at least one of the plurality of panel processing zones including a nanostructure deposition device, and at least one of the plurality of panel processing zones including a rinse zone that includes a nanowire ink removal port configured to remove nanowire ink from adjacent to the surface of the target panel and a solvent injection port configured to provide a solvent between the surface of the target panel and the bounding surface, wherein a first gap between the bounding surface and the surface of the target panel is approximately 1 mm, and a second gap between the nanowire ink removal port and the surface of the target panel is in the range of 10 μm to 100 μ;
wherein the transport mechanism is configured to convey the target panel through the plurality of panel processing zones.
17. The nanostructure deposition apparatus of claim 16 , wherein the plurality of panel processing zones further includes a drying zone.
18. The nanostructure deposition apparatus of claim 16 , wherein the plurality of panel processing zones further includes a repair zone.