IP Library Granted Patent US 9,419,070
Granted Patent B2
US 9,419,070 · App. 14/341,283 · Granted Aug 16, 2016

Composite reconstituted wafer structures

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Quick Facts
Patent No.
US 9,419,070
App. No.
14/341,283
Granted
Aug 16, 2016
Kind
B2
Abstract

A reconstituted electronic device comprising at least one die and at least one passive component. A functional material is incorporated in the substrate of the device to modify the electrical behavior of the passive component. The passive component may be formed in redistribution layers of the device. Composite functional materials may be used in the substrate to forms part of or all of the passive component. A metal carrier may form part of the substrate and part of the at least one passive component.

Claims (5)

1. A reconstituted electronic device, comprising:

a substrate in which at least one die and one piece of functional material are embedded; and

at least one metallic redistribution layer on a surface of the substrate, the at least one metallic redistribution layer defining an electrical component in an area at least partially within the area of the functional material when viewed in a plan view,

wherein the electrical component is an antenna, and the functional material is shaped with a hole at its center and the die is positioned in the hole such that the die is surrounded by the functional material.

2. The reconstituted electronic device of claim 1 , wherein the functional material is ferrite.

Assignments (1)
CHANGE OF NAME Recorded Sep 22, 2015
From: CAMBRIDGE SILICON RADIO LIMITED
To: QUALCOMM TECHNOLOGIES INTERNATIONAL, LTD.
Reel/Frame 036663/0211 →