Apparatus to store data and methods to read memory cells
View Patent ↗Apparatus to store data and methods to read memory cells are disclosed. A disclosed example method involves, during a read cycle of a memory cell, applying a current across the memory cell to read a content of the memory cell. During a subsequent read cycle of the memory cell, a subsequent current is applied across the memory cell in the opposite direction to read the content of the memory cell.
1. A method to read a memory cell, comprising:
during a read cycle of the memory cell, applying a current across the memory cell to read a content of the memory cell; and
during a subsequent read cycle of the memory cell, applying a subsequent current across the memory cell in a direction opposite the current to read the content of the memory cell.
2. The method of claim 1 , wherein:
applying the current changes a first distribution of a dopant in the memory cell to a second distribution of the dopant, the first and second distributions of the dopant representing a same stored information; and
applying the subsequent current is to render the first distribution of the dopant.
3. The method of claim 2 , wherein the first and second distributions of the dopant are to be above a threshold to represent the same stored information.
4. The method of claim 2 , further comprising, during a write cycle occurring before the read cycle, applying a third current across the memory cell to render the first distribution of the dopant in the memory cell.
5. The method of claim 1 , wherein the memory cell is a memristive memory cell.
6. The method of claim 1 , wherein the current and the subsequent current are direct currents.
7. The method of claim 1 , further comprising performing at least one intervening read cycle of the memory cell between the read cycle and the subsequent read cycle.
8. The method of claim 1 , further comprising, prior to receiving a request for the subsequent read cycle, changing an electrical current configuration to apply the subsequent current across the memory cell in the direction opposite the current.