Semiconductor light-emitting device with reflective surface region

1. A semiconductor lighting device, comprising:

a substrate having at least one reflective surface region covered with a light-reflecting layer,

at least one semiconductor light source populating the substrate; at least one insulating layer on the at least one reflective surface layer; and

at least one supply line applied over the at least one insulating layer,

wherein the light-reflecting layer has an aluminum carrier coated in a reflection-intensifying manner; and

wherein the insulating layer projects laterally beyond the respective supply line, and the laterally projecting part of the insulating layer is at least partially covered by a reflective potting compound.

2. The semiconductor lighting device as claimed in claim 1 , wherein the at least one semiconductor light source is applied on the at least one reflective surface region.

3. The semiconductor lighting device as claimed in claim 1 , wherein the at least one semiconductor light source has an electrically insulating underside.

4. The semiconductor lighting device as claimed in claim 3 , further comprising at least one supply line fitted on the substrate and serving for supplying the at least one semiconductor light source with electrical signals, wherein the at least one supply line is situated outside the at least one reflective surface region.

5. The semiconductor lighting device as claimed in claim 3 , wherein the at least one semiconductor light source is a volume emitter or a top emitter.

6. The semiconductor lighting device as claimed in claim 1 , further comprising at least one semiconductor light source having an electrical contact at its underside, wherein the electrical contact bears on an electrically conductive supply line.

7. The semiconductor lighting device as claimed in claim 1 , wherein the reflective potting compound is polymer, which comprises a reflective filling material.

8. The semiconductor lighting device as claimed in claim 7 , wherein the reflective potting compound is silicone.

9. The semiconductor lighting device as claimed in claim 7 , wherein the reflective filling material is titanium oxide.

10. The semiconductor lighting device as claimed in claim 1 , wherein the substrate is a plate-shaped substrate.

11. The semiconductor lighting device as claimed in claim 1 , wherein the semiconductor lighting device is a lighting module.

12. A method for producing a semiconductor lighting device, the method comprising:

providing a substrate;

coating at least one reflective surface region of the substrate with an aluminum carrier coated in a reflection-intensifying manner;

coating a part of the reflective surface region with an insulating material;

coating the insulating material with electrically conductive material in order to produce at least one electrical supply line; and thereafter populating the substrate with at least one semiconductor light source.

13. The method as claimed in claim 12 , wherein populating comprises placing the at least one semiconductor light source substantially directly onto a reflective surface region.