Integrated optical structure comprising an optical isolator
View Patent ↗An integrated optical structure includes at least one optical isolator, having a magneto-optical layer, associated with at least one SOA optical amplifier having a waveguide having an n-doped semiconductor layer, a p-doped semiconductor layer, and an active area disposed between the n-doped semiconductor layer and the p-doped semiconductor layer. The optical isolator is disposed between an SOI base and the SOA optical amplifier's waveguide. The optical isolator's magneto-optical layer is disposed between a lower insulating layer and an upper insulating layer. The optical isolator's magneto-optical layer may be a layer of ferromagnetic metallic material, such as a Fe—Co metallic alloy, or a magnetic oxide layer. An optical device includes at least one integrated optical structure.
1. An integrated optical structure comprising
at least one SOA optical amplifier comprising a waveguide comprising an n-doped semiconductor layer, a p-doped semiconductor layer, and an active zone disposed between the n-doped semiconductor layer and the p-doped semiconductor layer, associated with
at least one optical isolator disposed between a SOI base and the SOA optical amplifier's waveguide, comprising a magneto-optical layer,
wherein the magneto-optical layer is disposed between a lower insulating layer and an upper insulating layer.
2. An integrated optical structure according to claim 1 , wherein the optical isolator's magneto-optical layer is a layer of ferromagnetic metallic material.
3. An integrated optical structure according to claim 2 , wherein the optical isolator's magneto-optical layer is a Fe—Co metallic alloy layer.
4. An integrated optical structure according to claim 1 , wherein the optical isolator's magneto-optical layer is a layer of magnetic oxide.
5. An integrated optical structure according to claim 1 , wherein the upper insulating layer and the lower insulating layer are made up of an insulating material chosen from among a silicon nitride Si x N y and a silicon oxide SiO x .
6. An integrated optical structure according to claim 1 , wherein the n-doped semiconductor layer and the p-doped semiconductor layer of the waveguide are made of a group III-V semiconductor material.
7. An integrated optical structure according to claim 1 , wherein the waveguide's active area comprises a multiple quantum well structure.
8. An optical device comprising at least one integrated optical structure according to claim 1 , comprising at least one optical isolator and at least one SOA optical amplifier.
9. A method for constructing an integrated optical structure according to claim 1 , comprising
a first layer of an insulating material is deposited onto an SOI base,
a magneto-optical layer is deposited onto the first layer of insulating material,
a second layer of an insulating material is deposited onto the magneto-optical layer,
a semiconducting die is affixed to the second layer of insulating material,
the semiconducting die is treated in order to create an optical waveguide.
10. A method according to claim 9 , wherein the magneto-optical layer is deposited by a cathodic spraying method.
11. A method according to one of the claim 10 , wherein the magneto-optical layer is etched in order to give it a structure that makes it possible to increase the magneto-optical effect.
12. A method according to claim 10 , comprising at least one operation intended to smooth the surface of a layer of insulating material using a chemical and mechanical polishing method.