Production of micro-mechanical devices

1. A method for fabrication of a device from a wafer of semiconductor material having first and second sides, the method comprising:

depositing a dielectric layer on at least the first side of the wafer;

etching, using a first etching process, a pattern of features of the device through the dielectric layer into the semiconductor material on the first side of the wafer;

after etching the pattern, removing the dielectric layer to expose the semiconductor material over at least an area of the wafer that contains the pattern;

after removing the dielectric layer, locally thinning the entire exposed area of the wafer that contains the pattern and from which the dielectric layer was removed to a predefined thickness by removing the semiconductor material from at least the first side of the wafer using a second, wet etching process, while preserving the pattern in the area, wherein removing the dielectric layer comprises leaving the dielectric layer in place only around a perimeter of the device thereby preventing thinning of the perimeter during the wet etching process; and

etching through the thinned wafer in the area of the device so as to release a moving part of the device.

2. A method for fabrication of a device from a wafer of semiconductor material having first and second sides, the method comprising:

depositing a dielectric layer on at least the first side of the wafer;

etching, using a dry etching process, a pattern of features of the device through the dielectric layer into the semiconductor material on the first side of the wafer;

after etching the pattern, removing the dielectric layer from to expose the semiconductor material over at least the area of the device;

after etching the pattern, locally thinning the entire exposed area of the wafer in an area of the device that contains the pattern and from which the dielectric layer was removed to a predefined thickness by removing the semiconductor material from at least the first side of the wafer using a wet etching process, while preserving the pattern in the area, wherein removing the dielectric layer comprises leaving the dielectric layer in place only around a perimeter of the device thereby preventing thinning of the perimeter during the wet etching process; and

etching through the thinned wafer in the area of the device so as to release a moving part of the device,

wherein depositing the dielectric layer comprises depositing first and second dielectric layers, respectively, on the first and second sides of the wafer, wherein the first dielectric layer is removed from the wafer before thinning the wafer, and the second dielectric layer is removed from the wafer only after thinning the wafer.

3. A method for fabrication of a device from a wafer of semiconductor material having first and second sides, the method comprising:

etching, using a dry etching process, a pattern of features of the device into the semiconductor material on the first side of the wafer,

wherein etching the pattern comprises:

depositing a first dielectric layer on at least the first side of the wafer;

etching away the first dielectric layer from the area of the wafer that is to contain the pattern, so as to expose the semiconductor material in the area while the first dielectric layer remains in place around a perimeter of the device;

depositing a second dielectric layer over the exposed semiconductor material and over the remaining first dielectric material;

etching the pattern of features of the device into the semiconductor material through the second dielectric layer; and

after etching the pattern, removing the second dielectric layer to expose the semiconductor material over at least the area of the device, while leaving the first dielectric layer in place around the perimeter of the device so as to prevent thinning of the perimeter during a wet etching process;

after etching the pattern, locally thinning the entire exposed area of the wafer in an area of the device that contains the pattern and from which the dielectric layer was removed to a predefined thickness by removing the semiconductor material from at least the first side of the wafer using the wet etching process, while preserving the pattern in the area; and

etching through the thinned wafer in the area of the device so as to release a moving part of the device.

4. The method according to claim 1 , wherein the semiconductor material is silicon, and wherein the dielectric layer comprises a first sub-layer of silicon dioxide and a second sub-layer of silicon nitride adjacent to the first sub-layer.

5. The method according to claim 1 , wherein thinning the wafer comprises removing the semiconductor material from both the first and second sides of the wafer using the wet etching process.

6. The method according to claim 1 , and comprising depositing a reflective layer on the second side of the wafer after thinning the wafer, whereby the device is configured to serve as a scanning mirror.

7. The method according to claim 1 , wherein etching through the thinned wafer comprises depositing a photoresist on the second side of the wafer, and applying a photolithographic process to define and etch openings passing through the thinned wafer.

8. The method according to claim 7 , wherein the openings comprise release openings, whereby the moving part of the device is separated along the release openings from a remaining portion of the device.

9. The method according to claim 7 , wherein the openings comprise singulation openings around an area of the device, and wherein the method comprises separating the device from a remaining portion of the wafer along the singulation openings.

10. The method according to claim 9 , wherein applying the photolithographic process comprises etching the singulation openings so as to leave tabs extending across the singulation openings between the device and the remaining portion of the wafer, and wherein separating the device comprises breaking the tabs.

11. The method according to claim 1 , wherein the first etching process is a dry etching process.