Light source with quantum dots

1. A luminescent nano particles based luminescent material comprising a matrix of interconnected coated luminescent nano particles,

wherein the luminescent nano particles are selected from the group consisting of semiconductor nano particles that are able to emit in the visible part of the spectrum,

wherein the luminescent nano particles comprise a first coating comprising a first coating material, being different from the semiconductor material of the nano particles, wherein the first coating material is selected from the group consisting of M1 x -M2 y -M3 z -A (x+2y+3z)/2 compounds,

wherein M1 is selected from the group consisting of Na, Li, Mg, Cu, Ag and Au,

wherein M2 is selected from the group consisting of Zn and Cd,

wherein M3 is selected from the group consisting of Ga, As, In and Tl,

wherein A is selected from the group consisting of O, S, Se, As, P, and Te,

wherein x is in the range of 0-1,

wherein y is in the range of 0-1,

wherein z is in the range of 0-1,

wherein at least one of x, y and z is larger than 0,

wherein the matrix comprises a second coating comprising a second coating material, being different from the first coating material, wherein the second coating material is selected from the group consisting of M4A,

wherein M4 is selected from the group consisting of Al, Ca, Mg, Zn and Cd,

wherein A is selected from the group consisting of Cl, F, O, S, Se and Te,

wherein the matrix of interconnected luminescent nano particles comprises spherical-joint structures, wherein one or more spherical parts comprise one or more coated luminescent nano particles,

wherein the spherical parts are interconnected with joints comprising a material selected from the group consisting of M1 x -M2 y -M3 z -A (x+2y+3z)/2 and M4A compounds, with M1, M2, M3, M4, A, x, y, z as defined above.

2. The luminescent material according to claim 1 , wherein the luminescent nano particles are selected from the group consisting of InP, CuInS 2 , CuInSe 2 , CdTe, CdSe, CdSeTe, AgInS 2 , AgInSe 2 , and ZnSe:Mn.

3. The luminescent material according to claim 1 , wherein the first coating comprises a material selected from the group consisting of Cu x Zn y In z S (z+2y+3z)/2 , Cu x Zn y In z Se (z+2y+3z)/2 , ZnTeSe, and CdS.

4. The luminescent material according to claim 1 , wherein the matrix comprises CdSe/CdS dots-in-rots nano particles.

5. The luminescent material according to claim 1 , wherein the matrix comprises CdSe/CdS core-shell nano particles.

6. The luminescent material according to claim 1 , wherein the second coating is selected from the group consisting of ZnS, SiO 2 , MgS, ZnSe, ZnO, Zn 1-x Mg x S y Se 1-y , ZnSO 3 and ZnSO 4 .

7. The luminescent material according to claim 1 , wherein the second coating material is selected from the group consisting of MgS, ZnO, ZnS, ZnSe, ZnSSe, ZnSO 4 , and Zn 1-x Mg x S y Se 1-y .

8. The luminescent material according to claim 1 , wherein the luminescent nano particles comprise CdSe, wherein the first coating material comprises CdS and wherein the second coating material comprises ZnS.

9. The luminescent material according to claim 1 , wherein adjacent luminescent nano particles have a shortest distance (d) of at least 5 nm, and wherein the second coating has coating thicknesses (d 2 ) in the range of 1-50 nm.

10. The luminescent material according to claim 1 , having a quantum efficiency of at least 80% at 25° C., and having a quench of quantum efficiency of at maximum 20% at 100° C. compared to the quantum efficiency at 25° C.