Medical Implants with Enhanced Osseointegration
Medical implants with non-equilibrium surface structures are disclosed. The surface treatment of the implants greatly enhances osseointegration, reduces time to recovery following implant surgery, reduces surgery-related infections, and improves outcomes. The implants, including dental implants and other implants for insertion into or attachment to bone, are applicable to treatment of a wide variety of medical conditions. The methods of altering the surface properties of medical implants include exposure of a crystalline surface material, such as metal or ceramic, to a short burst of high thermal energy or shock, resulting in the introduction of a non-equilibrium concentration of crystal lattice defects in a surface layer.
1 . A method of treating a medical implant comprising a crystalline surface material to promote protein adsorption to said surface material, the method comprising the steps of:
heating the surface material to form a surface layer comprising crystal lattice defects; and
thermally quenching the surface layer so as to preserve a non-equilibrium concentration of said defects.
2 . The method of claim 1 , wherein the heating step is performed such that the crystalline surface material is heated to at least one-half of its melting temperature for a period of time in the range from about 10 nanoseconds to about 100 microseconds.
3 . The method of claim 1 , wherein the heating step is performed using a pulsed or continuous energy source selected from the group consisting of an ion beam, an electron beam, a laser, and an electric arc.
4 . The method of claim 3 , wherein the energy source is a pulsed ion beam having a beam voltage in the range from about 100 kV to about 10 MV, a beam current in the range from about 1 A to about 1000 A, and a pulse width from about 10 nanoseconds to about 100 microseconds.
5 . The method of claim 3 , wherein the energy source is a pulsed electron beam having a beam voltage in the range from about 100 kV to about 10 MV, a beam current in the range from about 1 A to about 1000 A, and a pulse width from about 10 nanoseconds to about 100 microseconds.
6 . The method of claim 3 , wherein the energy source is an electron beam welding apparatus with a beam voltage in the range from about 50 kV to about 150 kV and a beam current in the range from about 1 mA to about 1 A.
7 . The method of claim 3 , wherein the energy source is a pulsed laser with a pulse width from about 10 picoseconds to about 1 millisecond, a pulse energy from about 1 picojoule per pulse to about one joule per pulse, wavelength from about 375 nm to about 1550 nm, and a pulse repetition rate from a single pulse to about 1 million pulses per second.
8 . The method of claim 3 , wherein the energy source is an arc welding apparatus operating either in straight or reverse polarity, with a voltage in the range from about 1V to about 20V, a current in the range from about 0.1 A to about 100 A, and wherein the heating step is carried out in the presence of one or more inert shielding gases.
9 . The method of claim 1 , wherein the quenching is performed at a rate of at least 104 degrees K per second.
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14 . The method of claim 1 , wherein the surface layer has a thickness in the range from about 10 nm to about 25 μm.
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16 . The method of claim 1 , wherein crystalline surface material below said surface layer has an equilibrium concentration of crystal lattice defects.
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18 . The method of claim 1 , wherein the method of treating removes surface features and surface voids having a size of about 10 microns or less.
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22 . A method of treating a medical implant comprising a crystalline surface material to promote protein adsorption to said surface material, the method comprising the step of: performing shock deformation of the surface to form a surface layer comprising a non-equilibrium concentration of crystal lattice defects.
23 . The method of claim 22 , wherein shock deformation is performed by generating a shock wave in the surface layer using a pulsed energy source selected from the group consisting of a laser, an ion beam, and an electron beam.
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47 . A medical implant comprising a bulk material and a surface layer; wherein the surface layer is disposed at a surface of the implant, and the bulk material is disposed beneath the surface layer; wherein the bulk material and the surface layer have essentially the same chemical composition; wherein the surface layer has a non-equilibrium concentration of crystal lattice defects; and wherein the bulk material has an equilibrium concentration of crystal lattice defects.
48 . The medical implant of claim 47 , wherein the surface layer and bulk materials comprise a crystalline material selected from the group consisting of titanium, titanium oxide, zirconium, zirconium oxide, aluminum oxide, and hydroxyapatite.
49 . The medical implant of claim 47 , wherein the surface layer and bulk materials consist essentially of metallic material or ceramic material.
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59 . The medical implant of claim 47 , wherein the surface layer has a thickness in the range from about 10 nm to about 25 μm.
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62 . The medical implant of claim 47 , wherein surface features and surface voids of the surface layer have a size of 5 microns or less.
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