Semiconductor device
A semiconductor device disclosed herein includes an insulated gate, a main and a sub trench conductors. The main and sub trench conductors are formed in the cell region, and have a conductor that is covered with an insulation film and fills a trench extending in a first direction. The sub trench is located, with respect to the main trench conductor, in a second direction perpendicularly crossing the first direction and extending from the cell region side to the non-cell region. Length of the sub trench conductor in the first direction is shorter than a length of the insulated gate in the first direction. Distance between the main and sub trench conductors is shorter than a distance between the main trench conductor and the insulated gate. At least a part of the sub trench conductor reaches a position deeper than a boundary between the first and second semiconductor regions.
1. A semiconductor device comprising a semiconductor substrate including a cell region and a non-cell region arranged around the cell region, wherein:
the cell region comprises:
a first semiconductor region of a first conductivity type;
a second semiconductor region of a second conductivity type formed on a surface of the semiconductor substrate on a front surface side of the first semiconductor region;
an insulated gate of a trench type extending from a surface side of the semiconductor substrate through the second semiconductor region to a depth where the insulated gate is in contact with the first semiconductor region, a lengthwise direction of the insulated gate being extended in a first direction; and
a first trench conductor formed at least partially in the cell region between the insulated gate and the non-cell region, and having a conductor that is covered with an insulation film and fills a trench,
the first trench conductor includes a first portion extending in the first direction, and a second portion protruding in a second direction perpendicularly crossing the first direction and extending from a cell region side toward the non-cell region, and
at least a part of a bottom of the second portion reaches a position deeper than a boundary between the first and second semiconductor regions;
wherein the semiconductor device, further comprising:
a second trench conductor formed at least partially in the cell region between the first portion of the first trench conductor and the non-cell region, and having a conductor that is covered with the insulation film and fills a trench, wherein:
the second trench conductor is positioned in the second direction with respect to the first portion of the first trench conductor,
a length of the second trench conductor in the first direction is shorter than a length of the insulated gate in the first direction,
a distance between the first portion of the first trench conductor and the second trench conductor is shorter than a distance between the first trench conductor and the insulated gate nearest to the first trench conductor, and
at least a part of the second trench conductor reaches a position deeper than the boundary between the first and second semiconductor regions.
2. A semiconductor device comprising a semiconductor substrate including a cell region and a non-cell region arranged around the cell region, wherein:
the cell region comprises:
a first semiconductor region of a first conductivity type;
a second semiconductor region of a second conductivity type formed on a surface of the semiconductor substrate on a front surface side of the first semiconductor region;
an insulated gate of a trench type extending from a surface side of the semiconductor substrate through the second semiconductor region to a depth where the insulated gate is in contact with the first semiconductor region, a lengthwise direction of the insulated gate being extended in a first direction;
a third trench conductor formed in the cell region between the insulated gate and the non-cell region, and having a conductor that is covered with an insulation film and fills a trench extending in the first direction; and
a fourth trench conductor formed at least partially in the cell region between the insulated gate and the non-cell region, and having a conductor that is covered with the insulation film and fills a trench located, with respect to the third trench conductor, in a second direction perpendicularly crossing the first direction and extending from a cell region side toward the non-cell region,
a length of the fourth trench conductor in the first direction is shorter than a length of the insulated gate in the first direction,
a distance between the third and fourth trench conductors is shorter than a distance between the third trench conductor and the insulated gate nearest to the third trench conductor, and
at least a part of the fourth trench conductor reaches a position deeper than a boundary between the first and second semiconductor regions.