Organic light-emitting device and method for manufacturing same

1. An organic light emitting device comprising:

a substrate;

a first electrode provided on the substrate;

an organic material layer provided on the first electrode;

a second electrode pattern provided on the organic material layer and comprising two or more metal layers spaced apart from each other; and

a fuse layer provided in an entire region of an upper surface of the second electrode pattern and gaps between the metal layers spaced apart from each other,

wherein a difference in thickness between the metal layer and the fuse layer is from 10 nm to 100 nm such that a portion, in which the second electrode pattern and the fuse layer are in contact with each other, is disconnected when an amount of current thereof exceeds a threshold value.

2. The organic light emitting device of claim 1 , wherein the metal layer comprises one or more selected from the group consisting of Al, Ag, Ca, Mg, Au, Mo, Ir, Cr, Ti, Pd, and an alloy thereof.

3. The organic light emitting device of claim 1 , wherein the fuse layer comprises a metal having a melting point lower than that of the metal layer.

4. The organic light emitting device of claim 1 , wherein the metal layer and the fuse layer comprise the same material.

5. The organic light emitting device of claim 4 , wherein a thickness of the fuse layer is smaller than that of the metal layer.

6. The organic light emitting device of claim 1 , wherein the fuse layer comprises one or more selected from the group consisting of Al, Ag, Ca, Mg, and indium.

7. The organic light emitting device of claim 1 , wherein the metal layer comprises Ag, and the fuse layer comprises Ca.

8. The organic light emitting device of claim 1 , wherein at least a part of the fuse layer is in contact with the organic material layer.

9. The organic light emitting device of claim 1 , wherein at least a part of the fuse layer comprises a structure having a form which is electrically short-circuited.

10. An organic light emitting device comprising:

a substrate;

a first electrode provided on the substrate;

an organic material layer provided on the first electrode; and

a second electrode provided on the organic material layer,

wherein thicknesses of at least some regions of the second electrode are different from those of the other regions thereof,

wherein, in the second electrode, a difference in thickness between a relatively thin region and the other regions is from 10 nm to 100 nm such that a portion, in which the second electrode pattern and the fuse layer are in contact with each other, is disconnected when an amount of current thereof exceeds a threshold value.

11. The organic light emitting device of claim 10 , wherein the second electrode comprises one or more selected from the group consisting of Al, Ag, Ca, Mg, Au, Mo, Ir, Cr, Ti, Pd, and an alloy thereof.

12. An organic light emitting device comprising:

a substrate;

a first electrode provided on the substrate;

an organic material layer provided on the first electrode;

a second electrode pattern provided on the organic material layer and comprising a compound represented by the following Formula 1; and

a fuse layer provided in an entire region of an upper surface of the second electrode pattern and gaps between the second electrode patterns:

in Formula 1,

R 1 to R 6 are the same as or different from each other, and each independently hydrogen, a halogen atom, nitrile (—CN), nitro (—NO 2 ), sulfonyl (—SO 2 R), sulfoxide (—SOR), sulfonamide (—SO 2 NR), sulfonate (—SO 3 R), trifluoromethyl (—CF 3 ), ester (—COOR), amide (—CONHR or —CONRR′), a substituted or unsubstituted straight or branched C 1 to C 12 alkoxy, a substituted or unsubstituted straight or branched C 1 to C 12 alkyl, a substituted or unsubstituted straight or branched C 2 to C 12 alkenyl substituted or unsubstituted aromatic or non-aromatic heterocyclic ring, a substituted or unsubstituted aryl, a substituted or unsubstituted mono- or di-aryl amine, or a substituted or unsubstituted aralkyl amine, in which R and R′ are each independently a substituted or unsubstituted C 1 to C 60 alkyl, a substituted or unsubstituted aryl, or a substituted or unsubstituted 5- to 7-membered heterocyclic ring,

wherein the fuse layer comprises a metal having a melting point lower than that of the second electrode pattern such that a portion, in which the second electrode pattern and the fuse layer are in contact with each other, is disconnected when an amount of current thereof exceeds a threshold value.

13. The organic light emitting device of claim 1 , wherein the substrate is selected from the group consisting of glass, SiO 2 , a silicon wafer, polyethylene terephthalate (PET), polycarbonate (PC), polyimide (PI), polyethylene naphthalate (PEN), and cycloolefin polymer (COP).

14. The organic light emitting device of claim 1 , wherein the first electrode comprises one or more selected from the group consisting of indium tin oxide (ITO), IZO, ZnO, and SnO 2 .

15. The organic light emitting device of claim 1 , further comprising:

an internal light extraction layer provided between the substrate and the first electrode, or an external light extraction layer provided on a surface opposite to a surface of the substrate on which the first electrode is provided.

16. The organic light emitting device of claim 1 , wherein the organic light emitting device is a flexible organic light emitting device.

17. A display apparatus comprising the organic light emitting device of claim 1 .

18. An illumination apparatus comprising the organic light emitting device of claim 1 .

19. A method for preparing an organic light emitting device, the method comprising:

1) forming a first electrode on a substrate;

2) forming an organic material layer on the first electrode;

3) forming two or more metal layers spaced apart from each other on the organic material layer; and

4) forming a fuse layer in an entire region of an upper surface of the metal layer and gaps between the metal layers spaced apart from each other,

wherein a difference in thickness between the metal layer and the fuse layer is from 10 nm to 100 nm such that a portion, in which the second electrode pattern and the fuse layer are in contact with each other, is disconnected when an amount of current thereof exceeds a threshold value.

20. The method of claim 19 , wherein the fuse layer comprises a metal having a melting point lower than that of the metal layer.

21. The method of claim 19 , wherein the metal layer and the fuse layer comprise the same material.

22. The method of claim 19 , wherein the fuse layer comprises one or more selected from the group consisting of Al, Ag, Ca, Mg, and indium.