Semiconductor light emitting device with thick metal layers

1. A light emitting device comprising:

a semiconductor structure comprising a light emitting layer sandwiched between an n-type region and a p-type region; and

first and second metal contacts, wherein the first metal contact is in direct contact with the n-type region and the second metal contact is in direct contact with the p-type region; and

first and second metal layers integral to the device and disposed on the first and second metal contacts, respectively,

wherein the first and second metal layers are sufficiently thick to mechanically support the semiconductor structure and

wherein a portion of a sidewall the device adjacent to one of the first and second metal layers is reflective.

2. The device of claim 1 wherein the reflective sidewall is a reflective metal disposed on a sidewall of one of the first and second metal layers.

3. The device of claim 1 wherein the reflective sidewall is a reflective electrically insulating material disposed adjacent a sidewall of one of the first and second metal layers.

4. The device of claim 3 wherein the reflective electrically insulating material comprises TiO 2 disposed in one of silicone and epoxy.

5. The device of claim 1 wherein the first and second metal layers are thicker than 50 μm.