Radiation emitting or receiving optoelectronic semiconductor chip
View Patent ↗An optoelectronic semiconductor chip includes a multiplicity of active regions, arranged at a distance from one another, and a reflective layer arranged at an underside of the multiplicity of active regions, wherein at least one of the active regions has a main extension direction, one of the active regions has a core region formed with a first semiconductor material, the active region has an active layer, covering the core region at least in directions transversely with respect to the main extension direction of the active region, the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region, and the reflective layer reflects electromagnetic radiation generated during operation in the active layer.
1. An optoelectronic semiconductor chip comprising:
a multiplicity of active regions arranged at a distance from one another, and
a reflective layer arranged at an underside of the multiplicity of active regions, wherein
at least one of the active regions has a main extension direction,
one of the active regions has a core region formed with a first semiconductor material,
the active region has an active layer covering the core region at least in directions transversely with respect to the main extension direction of the active region,
the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region,
the reflective layer reflects electromagnetic radiation generated during operation in the active layer, and
an insulation material is arranged between the multiplicity of active regions, is transmissive to electromagnetic radiation generated during operation in the active layer, and surrounds the active regions at least in directions transversely with respect to the main extension direction.
2. The optoelectronic semiconductor chip according to claim 1 , wherein
the active regions are based on a nitride compound semiconductor material,
the first semiconductor material is deposited epitaxially onto a growth substrate, and the optoelectronic semiconductor chip is free of the growth substrate,
a growth direction of the first semiconductor material is substantially parallel to the main extension direction,
at least a large portion of the active regions have a length determined in the main extension direction and have a diameter determined in a plane perpendicular to the main extension direction, and the ratio of length to diameter is at least three,
at least a large portion of the active regions have a current spreading layer covering the cover layer at least in directions transversely with respect to the main extension direction, and the current spreading layer is transmissive to electromagnetic radiation generated during operation in the active layer,
the current spreading layer is formed with a transparent conductive oxide,
the current spreading layer extends over at least a large portion of the length of the active region,
an insulation material is arranged between the multiplicity of active regions, and the insulation material is transmissive to electromagnetic radiation generated during operation in the active layer and the insulation material surrounds the active regions at least in directions transversely with respect to the main extension direction,
the insulation material directly adjoins the current spreading layer at least in places,
the reflective layer directly adjoins the insulation material in places, and
at least a large portion of the active regions have a passivation layer at their underside facing the reflective layer, said passivation layer directly adjoining the reflective layer and the core region of the active region.
3. The optoelectronic semiconductor chip according to claim 1 , wherein the first semiconductor material is epitaxially deposited onto a growth substrate, and the optoelectronic semiconductor chip is free of the growth substrate.
4. The optoelectronic semiconductor chip according to claim 1 , wherein a growth direction of the first semiconductor material is substantially parallel to the main extension direction.
5. The optoelectronic semiconductor chip according to claim 1 , wherein the active region has a length determined in the main extension direction, the active region has a diameter determined in a plane being perpendicular to the main extension direction, and the ratio of length to diameter is at least three.
6. The optoelectronic semiconductor chip according to claim 1 , wherein the current spreading layer is formed with a transparent conductive oxide.
7. The optoelectronic semiconductor chip according to claim 1 , wherein the active region has a length determined in the main extension direction and the current spreading layer extends over at least a large portion of the length of the active region.
8. The optoelectronic semiconductor chip according to claim 1 , wherein the insulation material directly adjoins an outer surface of the active region at least in places.
9. The optoelectronic semiconductor chip according to claim 1 , wherein the active region has a current spreading layer covering the cover layer at least in directions transversely with respect to the main extension direction and the insulation material directly adjoins the current spreading layer at least in places.
10. The optoelectronic semiconductor chip according to claim 1 , wherein the reflective layer directly adjoins the insulation material in places.
11. The optoelectronic semiconductor chip according to claim 1 , wherein the mask layer is transmissive to electromagnetic radiation generated during operation in the active layer.
12. The optoelectronic semiconductor chip according to claim 1 , wherein a coupling-out layer is arranged at a side of the multiplicity of active regions facing away from the reflective layer, said coupling-out layer being formed with the first semiconductor material.
13. The optoelectronic semiconductor chip according to claim 1 , wherein
a coupling-out layer is arranged at a side of the multiplicity of active regions facing away from the reflective layer, said coupling-out layer being formed with the first semiconductor material, and
the first semiconductor material of the coupling-out layer connects to the first semiconductor material in the core regions of the active regions through the openings in the mask layer.
14. The optoelectronic semiconductor chip according to claim 1 , wherein the active region has a passivation layer at its underside facing the reflective layer, said passivation layer directly adjoining the reflective layer and the core region of the active region.
15. An optoelectronic semiconductor chip comprising:
a multiplicity of active regions arranged at a distance from one another, and
a reflective layer arranged at an underside of the multiplicity of active regions, wherein
at least one of the active regions has a main extension direction,
one of the active regions has a core region formed with a first semiconductor material,
the active region has an active layer covering the core region at least in directions transversely with respect to the main extension direction of the active region,
the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region,
the reflective layer is configured to reflect electromagnetic radiation generated during operation in the active layer, and
the active region has a current spreading layer covering the cover layer at least in directions transversely with respect to the main extension direction, and the current spreading layer is transmissive to electromagnetic radiation generated during operation in the active layer.
16. An optoelectronic semiconductor chip comprising:
a multiplicity of active regions arranged at a distance from one another, and
a reflective layer arranged at an underside of the multiplicity of active regions, wherein
at least one of the active regions has a main extension direction,
one of the active regions has a core region formed with a first semiconductor material,
the active region has an active layer covering the core region at least in directions transversely with respect to the main extension direction of the active region,
the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region,
the reflective layer is configured to reflect electromagnetic radiation generated during operation in the active layer, and
a mask layer is arranged at a side of the multiplicity of active regions facing away from the reflective layer, and the mask layer has, for each of the active regions, an opening through which the first semiconductor material penetrates.