IP Library Granted Patent US 9,649,593
Granted Patent B2
US 9,649,593 · App. 14/365,755 · Granted May 16, 2017

Epitaxial thin film solid crystal electrolyte including lithium

Inventors: Hiromichi Ohta (Aichi, JP); Noriyuki Aoki (Aichi, JP)
Assignee: Sony Corporation
B01D53/326B01D61/44C01B33/12C25B13/04C30B1/00C30B23/066C30B25/02C30B29/32H01B1/122H01G9/15H01G11/56H01M8/1246H01M10/052H01M10/0525H01M10/0562H01M10/0585C30B29/22C30B29/30H01G11/06H01M8/1016H01M2300/0068H01M2300/0071Y02E60/13Y02E60/525Y02P70/54Y02P70/56Y02T10/7011Y02T10/7022
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Quick Facts
Patent No.
US 9,649,593
App. No.
14/365,755
Granted
May 16, 2017
Kind
B2
Abstract

Provided is a solid electrolyte including an epitaxial thin film crystal made of an electrolyte containing at least lithium.

Claims (14)

1. A solid electrolyte comprising:

an epitaxial thin film crystal made of an electrolyte containing at least lithium,

wherein a surface of the epitaxial thin film crystal includes terraces that are arranged in a stepped configuration,

wherein the electrolyte is at least one electrolyte selected from the group consisting of La 2/3−x Li 3x TiO 3 (0<x<⅔), La 0.5 Li 0.5 TiO 3 , Li 7 La 3 Zr 2 O 12 , Li 9 SiAlO 3 , Li 5 La 3 Ta 2 O 12 , Li 5 La 3 Nb 2 O 12 , Li 6 BaLa 2 Ta 2 O 12 , Li 3.6 Si 0.6 P 0.4 O 4 , LiZr 2 (PO 4 ) 3 , Li 14 Zn(GeO 4 ) 4 , Li 3.25 Ge 0.25 P 0.75 S 4 , Li 10 GeP 2 S 12 , Li 4+x M x Si 1−x O 4 (M=B, Al), Li 1+x Al x Ti 2−x (PO 4 ) 3 and Li 3 N,

wherein the epitaxial thin film crystal is epitaxially grown on a single crystal substrate that includes terraces that are atomically flat and that are arranged in a stepped configuration, and

wherein the single crystal substrate is at least one substrate selected from the group consisting of an oxide having a perovskite-type crystal structure represented by a general formula ABO 3 (A is at least one element selected from the group consisting of Sr, Ba, La and K, and B is at least one element selected from the group consisting of Ti, Al and Ta), NdGaO 3 , YSZ, MgO, Al 2 O 3 and Si.

2. The solid electrolyte according to claim 1 ,

wherein the epitaxial thin film crystal has a mean-square surface roughness measured on a region of 2 μm square of 1 nm or less.

3. The solid electrolyte according to claim 1 ,

wherein the oxide having the perovskite-type crystal structure represented by the general formula ABO 3 is at least one oxide selected from the group consisting of SrTiO 3 , LaAlO 3 and (LaSr)(AlTa)O 3 .

4. The solid electrolyte according to claim 1 ,

wherein the epitaxial thin film crystal includes a domain structure formed by at least two single crystal regions of which crystal orientations are different from each other.

5. The solid electrolyte according to claim 4 ,

wherein the at least one single crystal region is present along an entire thickness direction of the epitaxial thin film crystal.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 22, 2018
From: TOHOKU MURATA MANUFACTURING CO., LTD
To: MURATA MANUFACTURING CO., LTD.
Reel/Frame 045103/0835 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 22, 2018
From: SONY CORPORATION
To: TOHOKU MURATA MANUFACTURING CO.,LTD
Reel/Frame 045104/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 17, 2014
From: OHTA, HIROMICHI; AOKI, NORIYUKI
To: SONY CORPORATION
Reel/Frame 033186/0456 →
Priority Claims (1)
JP 2011-282589 · Dec 26, 2011 · national
Continuity (1)
Related Publication 20140308590A1 · Oct 16, 2014