Control of an inductive load with temperature-sensitive current reduction mechanism
View Patent ↗The control of an inductive load is implemented by a control strategy to generate a control signal for a switching element on the basis of a setpoint datum, with a mechanism defining a maximum permitted value (Imax) of the current in the load as a function of the temperature at the level of the switching element. The mechanism exhibits a temperature threshold (Tshd). The maximum permitted value (Imax) of the current is held constant, equal to an upper limit value (Isup), during a temperature climb phase for all the temperatures which are lower than the threshold. The maximum permitted value of the current is abruptly rendered equal to a lower limit value (Iinf) as soon as the temperature reaches the threshold. Finally, during a temperature descent phase, the maximum permitted value of the current gradually climbs back to the upper limit value as the temperature decreases.
1. A control device for an inductive load comprising:
a switching structure with at least one switching element, adapted for driving a current of determined value in the load as a function of a setpoint datum (CDE),
a control unit ( 2 ) designed to implement a control strategy to generate at least one control signal (S 21 , S 31 ) for the switching element on the basis of the setpoint datum (CDE), with a mechanism consisting in defining a maximum permitted value (Imax) of the current in the load as a function of a value representative of the temperature at the level of the switching element, between an upper limit value (Isup) and a lower limit value (Iinf),
the mechanism comprising means for:
holding constant the maximum permitted value (Imax) of the current, during a temperature climb phase, equal to the upper limit value (Isup), as long as the temperature at the level of the switching element is lower than a first temperature threshold (Tsup),
abruptly rendering the maximum permitted value of the current equal to the lower limit value (Iinf) as soon as the value of the temperature at the level of the switching element reaches the first temperature threshold (Tsup), and
permitting the maximum permitted value of the current to climb back gradually to the upper limit value (Isup), during a temperature descent phase, as the temperature at the level of the switching element decreases, so that an equilibrium point is found.
2. The device as claimed in claim 1 , in which the setpoint datum is the duty ratio of a periodic setpoint control signal.
3. The device as claimed in claim 2 , in which the lower limit value (Iinf) of the maximum permitted value (Imax) of the current in the load is about 2.5 A.
4. The device as claimed in claim 1 , in which the lower limit value (Iinf) of the maximum permitted value (Imax) of the current in the load is about 2.5 A.
5. The device as claimed in claim 1 , in which the first temperature threshold (Tsup) is a cutout threshold.
6. The device as claimed in claim 5 , in which the mechanism is such that, furthermore, if during the temperature climb phase the temperature is greater than a second determined temperature threshold, lower than the first temperature threshold (Tsup), while being lower than said first temperature threshold (Tsup), for a duration greater than a determined time lag, then the maximum permitted value of the current is abruptly decreased to the lower limit value (Iinf) before being permitted to climb back gradually to the upper limit value (Isup) during the temperature descent phase.
7. The device as claimed in claim 6 , in which the value of the second temperature threshold is substantially equal to the value of the first threshold less 10% to 15%.
8. The device as claimed in claim 1 , in which the switching element comprises a transistor.
9. An integrated circuit characterized in that it comprises a device as claimed in claim 1 .
10. The device as claimed in claim 1 , in which the first temperature threshold (Tsup) is a cutout threshold, whose value is 170° C.
11. The device as claimed in claim 10 ,
in which the mechanism is such that, furthermore, if during the temperature climb phase the temperature is greater than a second determined temperature threshold, lower than the first temperature threshold (Tsup), while being lower than said first temperature threshold (Tsup), for a duration greater than a determined time lag, then the maximum permitted value of the current is abruptly decreased to the lower limit value (Iinf) before being permitted to climb back gradually to the upper limit value (Isup) during the temperature descent phase, and
in which the value of the second temperature threshold is substantially equal to the value of the first threshold less 10% to 15%.
12. The device as claimed in claim 1 , in which the switching element comprises an MOS transistor.
13. A control method for an inductive load comprising the steps of:
driving a current of determined value in the load as a function of a setpoint datum (CDE), with the aid of a switching structure having at least one switching element,
implementing a control strategy to generate at least one control signal (S 21 , S 31 ) for the switching element on the basis of the setpoint datum (CDE), with a mechanism consisting in defining a maximum permitted value (Imax) of the current in the load as a function of a value representative of the temperature at the level of the switching element, between an upper limit value (Isup) and a lower limit value (Iinf), characterized in that the mechanism is such that:
during a temperature climb phase, the maximum permitted value (Imax) of the current is held constant, equal to the upper limit value (Isup), as long as the temperature at the level of the switching element is lower than a first temperature threshold (Tsup),
the maximum permitted value (Imax) of the current is abruptly rendered equal to the lower limit value (Iinf) as soon as the value of the temperature at the level of the switching element reaches the first temperature threshold (Tsup) and,
during a temperature descent phase, the maximum permitted value (Imax) of the current is permitted to climb back gradually to the upper limit value (Isup) as the temperature at the level of the switching element decreases.
14. The method as claimed in claim 13 , in which the setpoint datum is the duty ratio of a periodic setpoint control signal.
15. The method as claimed in claim 14 , in which the first temperature threshold (Tsup) is a cutout threshold (Tj).
16. The method as claimed in claim 15 , in which the mechanism is such that, furthermore, if during the temperature climb phase the temperature is greater than a second determined temperature threshold, lower than the first temperature threshold (Tsup), while being lower than said first threshold (Tsup), for a duration greater than a determined time lag, then the maximum permitted value (Imax) of the current is abruptly decreased to the lower limit value (Iinf) before being permitted to climb back gradually to the upper limit value (Isup) as the temperature at the level of the switching element decreases.
17. The method as claimed in claim 16 , in which the value of the second temperature threshold is substantially equal to the value of the first threshold less 10% to 15%.
18. The method as claimed in claim 14 , in which the lower limit value (Iinf) of the maximum permitted value (Imax) of the current in the load is about 2.5 A.
19. The method as claimed in claim 13 , in which the lower limit value (Iinf) of the maximum permitted value (Imax) of the current in the load is about 2.5 A.
20. The method as claimed in claim 19 , in which the first temperature threshold (Tsup) is a cutout threshold (Tj), whose value is substantially equal to 170° C.