Normally-off-type heterojunction field-effect transistor
A normally-off-type HFET includes: an undoped Al w Ga 1-w N layer of t 1 thickness, an undoped Al x Ga 1-x N layer of t 2 thickness and an undoped GaN channel layer of t ch thickness that are sequentially stacked; a source electrode and a drain electrode separated from each other and electrically connected to the channel layer; an undoped Al y Ga 1-y N layer of t 3 thickness formed between the source electrode and the drain electrode on the channel layer; an Al z Ga 1-z N layer of t 4 thickness formed in a shape of a mesa on a partial area of the Al y Ga 1-y N layer between the source electrode and the drain electrode; and a Schottky barrier type gate electrode formed on the Al z Ga 1-z N layer, in which conditions of y>x>w>z, t 1 >t 4 >t 3 and 2wt ch /(x−w)>t 2 >1 nm are satisfied.
1. A normally-off-type HFET comprising:
an undoped Al w Ga 1-w N layer of t 1 thickness, an undoped Al x Ga 1-x N layer of t 2 thickness and an undoped GaN channel layer of t ch thickness that are sequentially stacked;
a source electrode and a drain electrode separated from each other and electrically connected to said channel layer;
an undoped Al y Ga 1-y N layer of t 3 thickness formed between said source electrode and said drain electrode on said channel layer;
an Al z Ga 1-z N layer of t 4 thickness formed in a shape of a mesa on a partial area of said Al y Ga 1-y N layer between said source electrode and said drain electrode; and
a Schottky barrier type gate electrode formed on said Al z Ga 1-z N layer,
conditions of y>x>w>z, t 1 >t 4 >t 3 and 2wt ch /(x−w)>t 2 >1 nm being satisfied.
2. The normally-off-type HFET according to claim 1 , wherein a condition of w−z>0.03 is satisfied.
3. The normally-off-type HFET according to claim 1 , wherein a condition of t 4 /t 3 >4 is satisfied.
4. The normally-off-type HFET according to claim 1 , wherein said Al z Ga 1-z N layer is undoped.
5. The normally-off-type HFET according to claim 1 , wherein the gate electrode comprises an Ni/Au stacked layer, a WN layer, a TiN layer, a W layer, or a Ti layer.
6. The normally-off-type HFET according to claim 1 , wherein said Al w Ga 1-w N layer, said Al x Ga 1-x N layer, said GaN channel layer, said Al y Ga 1-y N layer, and said Al z Ga 1-z N layer each have a Ga polarity in which a Ga atomic plane appears on a (0001) plane of an upper surface side.
7. A normally-off-type HFET comprising:
an undoped Al w Ga 1-w N layer of t 1 thickness and an undoped GaN channel layer of t ch thickness that are sequentially stacked;
a source electrode and a drain electrode separated from each other and electrically connected to said channel layer;
an undoped Al y Ga 1-y N layer of t 3 thickness formed between said source electrode and said drain electrode on said channel layer;
an Al z Ga 1-z N layer of t 4 thickness formed in a shape of a mesa on a partial area of said Al y Ga 1-y N layer between said source electrode and said drain electrode; and
a Schottky barrier type gate electrode formed on said Al z Ga 1-z N layer,
conditions of y>w>z and t 1 >t 4 >t 3 being satisfied.