Electronic device and manufacturing method therefor

1. An electronic device, comprising:

a substrate;

a first conductive layer disposed over the substrate;

an organic insulating layer disposed over the first conductive layer and having an aperture through which a portion of the first conductive layer is exposed;

a second conductive layer, which is metallic, covering a top face of the organic insulating layer, an inner circumferential face that faces the aperture in the organic insulating layer, and the portion of the first conductive layer that is exposed; and

an intermediate layer that includes one of an oxide and a nitride, disposed only on a half-part of the inner circumferential face that faces the aperture in the organic insulating layer, the half-part being arranged near the first conductive layer, wherein

the first conductive layer and the second conductive layer are in contact within the aperture in the organic insulating layer.

2. The electronic device of claim 1 , wherein

the first conductive layer is made from a metal, and

the intermediate layer is made from an oxide of the metal.

3. The electronic device of claim 1 , wherein

the intermediate layer is made from a conductive oxide material.

4. The electronic device of claim 1 , further comprising

an insulating layer made from one of an oxide and a nitride, disposed between the first conductive layer and the organic insulating layer, and having a corresponding aperture that corresponds with the aperture in the organic insulating layer through which the portion of the first conductive layer is exposed, wherein

an intermediate layer material and an insulating layer material are identical.

5. The electronic device of claim 1 , wherein

the first conductive layer is made from a metal, and

a metallic layer of the metal is further disposed between the intermediate layer and the second conductive layer.

6. The electronic device of claim 1 , wherein

the first conductive layer is made from a metal,

a metallic oxide layer is disposed between the first conductive layer and the organic insulating layer, the metallic oxide layer including an oxide of the metal, and

a region of the first conductive layer that is directly covered by the organic insulating layer has greater surface roughness than another region of the first conductive layer that is exposed through the organic insulating layer.

7. The electronic device of claim 1 , wherein

the first conductive layer is made from a metal, and

an oxide layer is an oxide of the metal disposed on a region of the first conductive layer covered by the organic insulating layer, between the first conductive layer and the organic insulating layer.

8. The electronic device of claim 1 , wherein

the first conductive layer is made from a metal including at least one of tungsten, molybdenum, titanium, chromium, and copper.

9. The electronic device of claim 1 , wherein

the second conductive layer is made from one of an aluminium alloy and a silver alloy.

10. A manufacturing method for an electronic device, comprising:

preparing a substrate;

forming, from a metal, a first conductive layer over the substrate;

forming, from an organic material, an organic insulating layer over the first conductive layer so as to have an aperture exposing a portion of the first conductive layer;

forming an intermediate layer that includes one of an oxide and a nitride, only on a half-part of an inner circumferential face of the organic insulating layer that faces the aperture in the organic insulating layer, by sputtering at least a surface of the first conductive layer that is exposed through the aperture in the organic insulating layer, the half-part being arranged near the first conductive layer; and

forming a second conductive layer, which is metallic, so as to cover a top face of the organic insulating layer, the inner circumferential face of the aperture in the organic insulating layer, and the portion of the first conductive layer that is exposed.

11. The manufacturing method for the electronic device of claim 10 , wherein

the oxide or the nitride in the intermediate layer is a metal oxide or a metal nitride of the metal forming the first conductive layer.

12. The manufacturing method for the electronic device of claim 11 , further comprising

oxidising at least the top face of the first conductive layer, between the forming of the first conductive layer and the forming of the intermediate layer.

13. The manufacturing method for the electronic device of claim 11 , further comprising

forming, from the metal in the first conductive layer, a metallic layer over the intermediate layer by sputtering the surface of the first conductive layer between the forming of the intermediate layer and the forming of the second conductive layer.

14. A manufacturing method for an electronic device, comprising:

preparing a substrate;

forming, from a metal, a first conductive layer over the substrate;

forming, from one of an oxide and a nitride, an insulating layer over the substrate and the first conductive layer;

forming, from an organic material, an organic insulating layer over the first conductive layer and opening an aperture that exposes a portion of the first conductive layer;

forming an intermediate layer from the same material as the insulating layer, only on a half-part of an inner circumferential face of the organic insulating layer that faces the aperture in the organic insulating layer, by removing a partial surface of the insulating layer through sputtering so as to expose a top face of the first conductive layer and sputtering at least the surface of the insulating layer that is exposed through the aperture in the organic insulating layer, the half-part being arranged near the first conductive layer; and

forming a second conductive layer, which is metallic, so as to cover the top face of the organic insulating layer, the inner circumferential face of the aperture in the organic insulating layer, and the portion of the first conductive layer that is exposed.

15. The electronic device of claim 1 , wherein

the second conductive layer is directly on the top face of the organic insulating layer.

16. The electronic device of claim 1 , wherein

the second conductive layer is directly on at least a part of the inner circumferential face that faces the aperture in the organic insulating layer.

17. The electronic device of claim 1 , wherein

the intermediate layer directly contacts the second conductive layer and at least a part of the inner circumferential face that faces the aperture in the organic insulating layer.

18. The electronic device of claim 1 , wherein

the intermediate layer increases in thickness in the aperture in a direction approaching the substrate.

19. The electronic device of claim 1 , wherein

the portion of the first conductive layer that is exposed through the aperture has a thickness that is less than other portions of the first conductive layer that are not exposed through the aperture.

20. The manufacturing method for the electronic device of claim 10 , wherein

in the forming the intermediate layer, the sputtering is performed by causing inert gas ions to collide with at least the surface of the organic insulating layer that is exposed through the aperture in the organic insulating layer, such that atoms constituting the first conductive layer fly off at least the surface and adhere to the inner circumferential face of the aperture in the organic insulating layer.