Optoelectronic component with inert gas atmosphere
View Patent ↗Various embodiments relate to an optoelectronic component, including a carrier element, on which at least one optoelectronic semiconductor chip is arranged, and a cover, which is mounted on the carrier element in a region extending circumferentially around the semiconductor chip and together with the carrier element forms a sealed cavity in which the at least one optoelectronic semiconductor chip is arranged in an inert gas.
1. An optoelectronic component comprising:
a carrier element, on which at least one optoelectronic semiconductor chip is arranged, and
a cover sintered or soldered on the carrier element in a region extending circumferentially around the semiconductor chip and together with the carrier element forms a sealed cavity in which the at least one optoelectronic semiconductor chip is arranged in an inert gas; wherein at least one wavelength conversion substance is embedded in the cover.
2. The optoelectronic component as claimed in claim 1 , wherein the at least one semiconductor chip comprises a reflective layer comprising silver.
3. The optoelectronic component as claimed in claim 2 , wherein the reflective layer faces the carrier.
4. The optoelectronic component as claimed in claim 1 , wherein the carrier element is formed by a ceramic material, a glass material, a metal or a combination thereof.
5. The optoelectronic component as claimed in claim 1 , wherein the inert gas is formed by Ar, Ne, N 2 or a mixture thereof.
6. The optoelectronic component as claimed in claim 1 , wherein the carrier element is planar and the cover has a depression for forming the cavity.
7. The optoelectronic component as claimed in claim 1 , wherein the cover comprises a ceramic material and/or glass material.
8. The optoelectronic component as claimed in claim 7 , wherein a circumferentially extending connection layer formed from a metallization or a glass solder is arranged between the cover and the circumferentially extending region of the carrier element.
9. The optoelectronic component as claimed in claim 8 , wherein the metallization is formed by a layer sequence comprising tungsten, nickel and silver or comprising tungsten, nickel and tin or comprising tungsten and NiPdAu.
10. The optoelectronic component as claimed in claim 7 , wherein the cover comprises a wavelength conversion substance on a surface of the cover which faces the at least one optoelectronic semiconductor chip and/or in a material of the cover.
11. The optoelectronic component as claimed in claim 10 , wherein the cover is at least partly formed by a wavelength conversion substance.
12. The optoelectronic component as claimed in claim 7 , wherein the cover comprises a wavelength conversion substance on a surface facing away from the at least one optoelectronic semiconductor chip.
13. The optoelectronic component as claimed in claim 1 , wherein the cover comprises a polymer material.
14. The optoelectronic component as claimed in claim 1 , wherein a silver layer is arranged on that surface of the carrier element which faces the at least one optoelectronic semiconductor chip, and/or the at least one optoelectronic semiconductor chip comprises a silver layer.
15. The optoelectronic component as claimed in claim 1 , further comprising at least one via configured to connect the at least one optoelectronic semiconductor chip to an element outside the cavity.