Granted Patent B2

US 9,257,617 · App. 14/375,461 · Granted Feb 9, 2016

Abstract

Claims (12)

1. A device comprising:

a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region;

a metal n-contact disposed on the n-type region and a metal p-contact disposed on p-type region;

a support, wherein the semiconductor structure is attached to the support through at least one of the n-contact and the p-contact such that the semiconductor structure and the support are mechanically self-supporting; and

a wavelength converting material extending over the sides of the semiconductor structure and the support;

wherein the wavelength converting material is a phosphor powder mixed with a transparent binder material in a pre-fabricated sheet.

2. The device of claim 1 wherein a thickness of the wavelength converting material varies less than 20% over the top and sides of the semiconductor structure and the support.

3. The device of claim 1 wherein the n-contact and the p-contact are formed on the same side of the semiconductor structure.

4. The device of claim 1 wherein the support comprises thick metal pads disposed on the semiconductor structure.

5. The device of claim 1 wherein the support comprises a silicon wafer.

6. The device of claim 1 wherein a structure comprising the semiconductor structure and the support has substantially vertical sidewalls.

7. The device of claim 1 wherein the wavelength converting material extends outward from a bottom of the support.

Assignments (8)