IP Library Granted Patent US 9,952,322
Granted Patent B2
US 9,952,322 · App. 14/375,620 · Granted Apr 24, 2018

Method for operating an optoelectronic proximity sensor and optoelectronic proximity sensor

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,952,322
App. No.
14/375,620
Granted
Apr 24, 2018
Kind
B2
Abstract

A method of operating an optoelectronic proximity sensor including a radiation-emitting component, a radiation-detecting component and a control unit includes: operating the radiation-emitting component with a pulsed current, wherein the pulsed current of the radiation-emitting component has an on time and an off time during a measurement period, and causing the control unit to evaluate a detector signal of the radiation-detecting component during the on time and ending the on time if the detector signal exceeds a threshold value, wherein the ratio of the on time to the measurement period is less than 1/10.

Claims (21)

1. A method of operating an optoelectronic proximity sensor comprising a radiation-emitting component, a radiation-detecting component and a control unit, the method comprising:

operating the radiation-emitting component with a pulsed current during a measurement period, wherein

the pulsed current of the radiation-emitting component has an on time of a predetermined duration and an off time during the measurement period, and

causing the control unit to evaluate a proximity detection signal of the radiation-detecting component indicating proximity during the on time and ending the on time even if before expiration of the predetermined duration, if the proximity detection signal exceeds a threshold value, wherein

the ratio of the on time to the measurement period is less than 1/10.

2. The method according to claim 1 , wherein the pulsed current of the radiation-emitting component has a predefined maximum on time during a measurement period if the proximity detection signal does not exceed the threshold value.

3. The method according to claim 2 , wherein the maximum on time (t on ) is 1 μs to 100 ms.

4. The method according to claim 1 , wherein the on time is reduced by at least a factor of 10 in the case of a maximum proximity detection signal.

5. The method according to claim 4 , wherein the on time is reduced by at least a factor of 100 in the case of a maximum proximity detection signal.

6. The method according to claim 1 , wherein the measurement period is 1 ms to 2000 ms.

7. The method according to claim 1 , wherein the pulsed current of the radiation-emitting component has a pulse sequence during the on time of a measurement period, and a period of the pulse sequence is less than the on time by at least a factor of 10.

8. An optoelectronic proximity sensor comprising a radiation-emitting component, a radiation-detecting component and a control unit wherein the control unit

operates the radiation-emitting component with a pulsed current during a measurement period, the pulsed current has an on time of a predetermined duration and an off time during the measurement period, and a ratio of the on time to the measurement period is less than 1/10, and

evaluates a proximity detection signal of the radiation-detecting component indicating proximity during the on time and to end the on time even if before expiration of the predetermined duration, if the proximity detection signal exceeds a threshold value.

9. The optoelectronic proximity sensor according to claim 8 , wherein the pulsed current of the radiation-emitting component has a predefined maximum on time during a measurement period if the proximity detection signal does not exceed the threshold value.

10. The optoelectronic proximity sensor according to claim 9 , wherein the maximum on time is 1 μs to 100 ms.

11. The optoelectronic proximity sensor according to claim 8 , wherein the on time is reduced by at least a factor of 10 in the case of a maximum proximity detection signal.

12. The optoelectronic proximity sensor according to claim 11 , wherein the on time is reduced by at least a factor of 100 in the case of a maximum proximity detection signal.

13. An electronic apparatus comprising an optoelectronic proximity sensor according to claim 8 .

14. The electronic apparatus according to claim 13 , further comprising a touch-sensitive input and display device.

15. The electronic apparatus according to claim 13 , which is a cellular phone, a tablet PC or a navigation apparatus.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 3, 2020
From: OSRAM OPTO SEMICONDUCTORS GMBH
To: OSRAM OLED GMBH
Reel/Frame 051467/0906 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 15, 2014
From: SOSSENHEIMER, DIRK; MÜLLER, CHRISTIAN
To: OSRAM OPTO SEMICONDUCTORS GMBH
Reel/Frame 033952/0609 →