METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT, AND OPTOELECTRONIC COMPONENT
Various embodiments relate to a method for producing an optoelectronic component includes applying a planarization medium to a surface of a substrate, wherein the planarization medium comprises a material which absorbs electromagnetic radiation having wavelengths of a maximum of 600 nm, applying a first electrode on or above the material, forming an organic functional layer structure on or above the first electrode, and forming a second electrode on or above the organic functional layer structure.
1 . A method for producing an optoelectronic component, the method comprising:
applying a planarization medium to a surface of a substrate, wherein the planarization medium comprises a material which absorbs electromagnetic radiation having wavelengths of a maximum of 600 nm;
applying a first electrode on or above the material;
forming an organic functional layer structure on or above the first electrode; and
forming a second electrode on or above the organic functional layer structure.
2 . The method as claimed in claim 1 ,
wherein the planarization medium is applied with a thickness such that a percentage of the light is absorbed in a range of approximately 85% to approximately 99%.
3 . The method as claimed in claim 1 ,
wherein the material which absorbs radiation having wavelengths of a maximum of 600 nm is admixed with a carrier material, such that the planarization medium is formed; and
wherein, after admixing the material, the planarization medium is applied to the surface of the substrate.
4 . The method as claimed in claim 1 , wherein the planarization medium is applied to the surface of the substrate by means of one of: spin coating, blade coating, printing, spraying, spreading, rolling, drawing, wiping, dipping, flooding, or slot casting.
5 . The method as claimed in claim 1 ,
wherein the planarization medium is a liquid; and
wherein, after applying the planarization medium, the planarization medium is cured.
6 . The method as claimed in claim 5 , wherein curing comprises at least one of:
outdiffusion of a solvent contained in the planarization medium;
irradiation of the planarization medium with electromagnetic radiation; and/or
heating of the planarization medium; and/or
polymerization by air moisture; and/or
reaction of two constituents of the planarization medium.
7 . The method as claimed in claim 1 , wherein the material is designed in such a way that it absorbs radiation having wavelengths of a maximum of 400 nm.
8 . An optoelectronic component, comprising:
a substrate;
a planarization medium applied on a surface of the substrate, wherein the planarization medium comprises a material which absorbs radiation having wavelengths of a maximum of 600 nm;
a first electrode on or above the material;
an organic functional layer structure on or above the first electrode; and
a second electrode on or above the organic functional layer structure.
9 . The optoelectronic component as claimed in claim 8 ,
wherein the planarization medium and/or the material have/has a thickness such that a percentage of the light is absorbed in a range of approximately 85% to approximately 99%.
10 . The optoelectronic component as claimed in claim 8 ,
wherein the material which absorbs radiation having wavelengths of a maximum of 600 nm is embedded in a matrix material.
11 . The optoelectronic component as claimed in claim 8 ,
wherein the planarization medium comprises a polymer to which the material which absorbs radiation having wavelengths of a maximum of 600 nm is bonded as molecule radical.
12 . The optoelectronic component as claimed in claim 8 ,
wherein the material is designed in such a way that it absorbs radiation having wavelengths of a maximum of 400 nm.
13 . The optoelectronic component as claimed in claim 8 ,
wherein the optoelectronic component comprises a light-emitting component and/or a solar cell.
14 . The optoelectronic component as claimed in claim 8 ,
wherein the planarization medium has a roughness of a maximum of 0.25 μm.