IP Library Granted Patent US 9,829,186
Granted Patent B2
US 9,829,186 · App. 14/376,438 · Granted Nov 28, 2017

Semiconductor lamp with rearward base region

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Quick Facts
Patent No.
US 9,829,186
App. No.
14/376,438
Granted
Nov 28, 2017
Kind
B2
Abstract

Various embodiments relate to a semiconductor bulb, including a housing, and at least one semiconductor light source that is arranged on the housing. The housing includes a rearward base region that is embodied from an electrically non-conductive material for the purpose of engaging in a bulb socket. At least one electrical contact element is arranged on the base region for the purpose of contacting the bulb socket. The base region is embodied for the purpose of arranging electrical contact elements of different base types.

Claims (42)

1. A semiconductor lamp comprising:

a housing, and

at least one semiconductor light source that is arranged on the housing, wherein

the housing comprises a rearward base region that is embodied from an electrically non-conductive material for the purpose of engaging in a bulb socket, wherein

at least one electrical contact element is arranged on the base region for the purpose of contacting the bulb socket and wherein

the base region is designed for selectively mounting electrical contact elements of different base types on said base region.

2. The semiconductor lamp as claimed in claim 1 ,

wherein the base region is designed for selectively mounting electrical contact elements at least of two base types of the group consisting of an Edison base, a bipin base and a bayonet base.

3. The semiconductor lamp as claimed in claim 2 ,

wherein the base region

comprises a first, end-side base section that is designed for receiving bipin contact pins on its front side and for installation in a bipin lamp socket,

and a second base section joined to the front of the end-side base section and said second base section comprises a larger diameter than the first base section and is designed such that the electrical contact element in the form of a contact cap of an Edison base or a bayonet base can endwise be plugged onto said second base section.

4. The semiconductor lamp as claimed in claim 3 , wherein the first base section comprises a height of approx. 12 mm.

5. The semiconductor lamp as claimed in claim 4 ,

wherein the first base section comprises at least at a maximum height a diameter of approx. 22.6 mm.

6. The semiconductor lamp as claimed in claim 3 ,

wherein the second base section comprises a diameter of approx. 25 mm.

7. The semiconductor lamp as claimed in claim 3 ,

wherein the second base section comprises a height of approx. 7.5 mm.

8. The semiconductor lamp as claimed in claim 3 ,

wherein the second base section comprises on the side at least one depression into which the contact cap can be pressed locally in a plastic manner.

9. The semiconductor lamp as claimed in claim 3 ,

wherein the Edison base is of the type E27, the bipin base is of the type GU10 and the bayonet base is of the type B22d.

10. The semiconductor lamp as claimed in claim 1 ,

wherein the base region is a lower housing region of a driver housing that is provided for the purpose of receiving a driver.

11. The semiconductor lamp as claimed in claim 10 ,

wherein an upper housing region of the driver housing comprises a contact surface for the at least one semiconductor light source.

12. The semiconductor lamp as claimed in claim 8 having an Edison base or a bayonet base, wherein semiconductor bulb is produced by a method, the method comprising:

pushing on the contact cap;

connecting at least one current carrying element; and

locally pressing in the contact cap in at least one depression that is arranged on the side of the second base section.

13. A method for producing a semiconductor lamp, the method comprising the following steps:

providing a semiconductor lamp according to claim 8 ;

connecting at least one current carrying element; and

locally pressing in the contact cap in at least one depression that is arranged on the side of the second base section.

14. A semiconductor lamp comprising:

a housing, and

at least one semiconductor light source that is arranged on the housing, wherein

the housing comprises a rearward base region that is embodied from an electrically non-conductive material for the purpose of engaging in a bulb socket,

wherein at least one electrical contact element is arranged on the base region for the purpose of contacting the bulb socket,

wherein the base region is designed for arranging electrical contact elements of different base types at least of two base types of the group consisting of an Edison base, a bipin base and a bayonet base,

wherein the base region comprises a first, end-side base section that is designed for receiving bipin contact pins on its front side and for installation in a bipin lamp socket, and a second base section joined to the front of the end-side base section and said second base section comprises a larger diameter than the first base section and is designed such that the electrical contact element in the form of a contact cap of an Edison base or a bayonet base can endwise be plugged onto said second base section.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 7, 2020
From: OSRAM GMBH
To: LEDVANCE GMBH
Reel/Frame 053144/0291 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 25, 2014
From: KORNDOERFER, ERIC
To: OSRAM GMBH
Reel/Frame 033813/0889 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 25, 2014
From: BECHT, ROLAND
To: OSRAM SASU
Reel/Frame 033813/0945 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 25, 2014
From: OSRAM SASU
To: OSRAM GMBH
Reel/Frame 033814/0021 →