Capacitive micro-machined ultrasound transducer device with charging voltage source

1. A capacitive micro-machined ultrasound transducer (CMUT) device for transmitting and/or receiving ultrasound waves, comprising:

at least one CMUT cell comprising:

a substrate comprising a first electrode,

a membrane comprising a second electrode,

a cavity formed between the substrate and the membrane, and

at least one dielectric layer between the first electrode and the membrane, wherein the dielectric layer is configured to hold trapped charges that increase output pressure and/or receive sensitivity of the CMUT cell, and wherein the dielectric layer extends in the cavity to prevent electrical contact between the first electrode and the membrane,

the CMUT device further comprising:

an operating bias voltage source for supplying an operating bias voltage (V B ) of a first polarity between the first and second electrode during transmitting and/or receiving ultrasound waves in a plurality of scan time periods of ultrasound imaging,

a charging voltage source for supplying an additional charging voltage (V C ) of a second polarity between the first and second electrode, the second polarity being the reverse polarity of the first polarity, and

a control unit for controlling the charging voltage source to supply the charging voltage for a long enough time period between two of the plurality of scan time periods of the ultrasound imaging to charge the at least one dielectric layer to generate the trapped charges to create a semi-permanent voltage in the at least one dielectric layer while the operating bias voltage source is disabled.

2. The CMUT device of claim 1 , wherein the at least one dielectric layer includes at least some other trapped charges that are generated during manufacturing of the CMUT device that remain in the at least one dielectric layer substantially permanently during a life of the CMUT device.

3. The CMUT device of claim 1 , wherein the control unit is further adapted to control the operating bias voltage source.

4. The CMUT device of claim 3 , wherein the control unit is adapted to control the operating bias voltage source to supply the operating bias voltage (V B ) for a long enough time period to provide significant accumulation of charge in the at least one dielectric layer.

5. The CMUT device of claim 1 , wherein the control unit is adapted to control the operating bias voltage source to supply the operating bias voltage (V B ) for a first time period (T B ) during transmitting and/or receiving ultrasound waves, and to control the charging voltage source to supply the charging voltage (V C ) for a second time period (T C ) during no transmitting and/or receiving of ultrasound waves.

6. The CMUT device of claim 1 , wherein the control unit is adapted to control the charging voltage source to supply the charging voltage (V C ) periodically during gap time periods between at least some of the plurality of scan time periods, in particular before each scan line or before each frame.

7. The CMUT device of claim 3 , wherein the control unit is adapted to control the operating bias voltage source to supply the operating bias voltage (V B ) at a first voltage level (V1), and to control the charging voltage source to supply the charging voltage (V C ) at a second voltage level (V2) different from the first voltage level (V1).

8. The CMUT device of claim 1 , further comprising a monitoring unit for monitoring the charge in the at least one dielectric layer.

9. The CMUT device of claim 8 , wherein the monitoring unit is adapted to monitor a shift in a capacitance-versus-voltage (CV) curve of the CMUT device, or to monitor the output pressure and/or receive sensitivity while varying the charging voltage (V C ).

10. The CMUT device of claim 8 , wherein the monitoring unit is adapted to detect when the trapped charges in the at least one dielectric layer is below a predetermined value.

11. The CMUT device of claim 10 , wherein the control unit is adapted to control the charging voltage source to reapply the charging voltage (V C ) to increase the trapped charges when the monitoring unit detects that the trapped charge in the at least one dielectric layer is below the predetermined value.

12. The CMUT device of claim 1 , wherein the control unit and the monitoring unit are implemented in the same device, in particular in an ASIC of the CMUT device.

13. The CMUT device of claim 1 , further comprising an alternating current source for supplying an alternating current (V AC ) between the first and second electrode for transmitting ultrasound waves.

14. The CMUT device of claim 1 , wherein the CMUT device is a high-intensity focused ultrasound (HIFU) transducer device.

15. A method of operating a capacitive micro-machined ultrasound transducer (CMUT) device comprising at least one CMUT cell comprising a substrate comprising a first electrode, a membrane comprising a second electrode, a cavity formed between the substrate and the membrane, and at least one dielectric layer between the first electrode and the membrane that is configured to hold trapped charges that increase output pressure and/or receive sensitivity of the CMUT cell and to prevent electrical contact between the first electrode and the membrane, the method comprising the steps of:

supplying an operating bias voltage (V B ) of a first polarity between the first and second electrode during transmitting and/or receiving ultrasound waves in a plurality of scan time periods of ultrasound imaging; and

supplying a charging voltage (V C ) of a second polarity between the first and second electrode for a long enough time period between two of the plurality of scan time periods of the ultrasound imaging to generate the trapped charges in the at least one dielectric layer to create a semi-permanent voltage in the at least one dielectric layer while the operating bias voltage is disabled, the second polarity being the reverse polarity of the first polarity.