LIGHT EMITTING DEVICE GROWN ON A SILICON SUBSTRATE
A method according embodiments of the invention includes growing a semiconductor structure on a substrate including silicon. The semiconductor substrate includes an aluminum-containing layer in direct contact with the substrate, and a III-nitride light emitting layer disposed between an n-type region and a p-type region. The method further includes removing the substrate. After removing the substrate, a transparent material is formed in direct contact with the aluminum-containing layer. The transparent material is textured.
1 . A device comprising:
a semiconductor structure comprising:
a III-nitride light emitting layer disposed between an n-type region and a p-type region; and
aluminum containing layers, an AlGaN layer disposed upon the n-type region and an AlN layer disposed upon the AlGaN layer; and
a transparent material disposed on the AlN.
2 . (canceled)
3 . (canceled)
4 . (canceled)
5 . The device of claim 1 wherein a surface of the transparent material is patterned.
6 . The device of claim 1 wherein a surface of the transparent material is textured.
7 . The device of claim 1 wherein surface of the transparent material is roughened.
8 . The device of claim 1 wherein an interface disposed between the aluminum containing layers and the light emitting region is non-planar.
9 . The device of claim 8 wherein the non-planar interface is an interface between the AlGaN layer and the n-type region.
10 . The device of claim 1 further comprising a porous semiconductor layer disposed between the aluminum-containing layers and the III-nitride light emitting layer.
11 . A method comprising:
growing a semiconductor structure on a substrate comprising silicon, the semiconductor structure comprising:
an aluminum-containing layer in direct contact with the substrate; and
a III-nitride light emitting layer disposed between an n-type region and a p-type region;
removing the substrate;
after removing the substrate, forming a transparent material in direct contact with the aluminum-containing layer; and
texturing the transparent material.
12 . (canceled)
13 . (canceled)
14 . (canceled)
15 . The method of claim 11 wherein the transparent material is formed by chemical vapor deposition.
16 . The method of claim 11 wherein the transparent material is a non-III-nitride material.
17 . The method of claim 11 further comprising:
after growing the aluminum-containing layer, forming a non-planar surface on the semiconductor structure;
after forming the non-planar surface, growing the III-nitride light emitting layer disposed between the n-type region and the p-type region.
18 . The method of claim 11 further comprising:
after growing the aluminum-containing layer, forming a porous GaN layer;
after forming the porous GaN layer, growing the III-nitride light emitting layer disposed between the n-type region and the p-type region.
19 . A device comprising:
a semiconductor structure comprising:
a III-nitride light emitting layer disposed between an n-type region and a p-type region; and
an aluminum-containing layer; and
a continuous porous III-nitride region disposed between the aluminum-containing layer and the III-nitride light emitting layer.
20 . The device of claim 19 wherein the porous III-nitride region is GaN and the semiconductor structure is grown on a silicon substrate.
21 . The device of claim 19 wherein aluminum containing layer is an AlGaN layer disposed upon the n-type region and an AlN layer disposed upon the AlGaN layer.
22 . The device of claim 19 further comprising a transparent material disposed on the aluminum-containing layer.
23 . The device of claim 22 wherein a surface of the transparent material is patterned.
24 . The device of claim 22 wherein the surface of the transparent material is textured.
25 . The device of claim 22 wherein the surface of the transparent material is roughened.
26 . The device of claim 1 wherein an interface disposed between the aluminum containing layers and the light emitting region is non-planar.