Permittivity shielding
Techniques for shielding permittivity-sensitive devices are disclosed.
1. A bioimplantable sensor device shielded against changing permittivity comprising:
a semiconductor device having an exterior surface with a sensor formed thereon;
a first layer of metallic adhesive adhered to a portion of the exterior surface of the semiconductor device;
a layer of permittivity shielding overlying and adhered to the first layer of metallic adhesive;
a second layer of metallic adhesive overlying and adhered to the layer of permittivity shielding; and
a biocompatible, outermost protective layer overlying and adhered to the second layer of metallic adhesive;
wherein the first layer of metallic adhesive, the layer of permittivity shielding, and the second layer of metallic adhesive cover the entire exterior surface of the semiconductor device except a part of the surface on which the sensor is formed.
2. The device of claim 1 , wherein the sensor is a microelectromechanical system.
3. The device of claim 1 wherein the semiconductor device is a complementary metal-oxide semiconductor device.
4. The device of claim 3 , wherein the sensor is a microelectromechanical system.
5. The device of claim 4 , wherein the sensor is a capacitive pressure sensor.
6. The device of claim 5 , wherein the first layer of metallic adhesive and the second layer of metallic adhesive are an alloy of tungsten and titanium.
7. The device of claim 6 , wherein the layer of permittivity shielding comprises gold.
8. The device of claim 7 , wherein the protective layer comprises silicone.
9. The device of claim 1 , wherein the first layer of metallic adhesive and the second layer of metallic adhesive are the same material.
10. The device of claim 9 , wherein the material of the first and second layers of metallic adhesive comprise tungsten.
11. The device of claim 10 , wherein the material of the first and second layers of metallic adhesive is an alloy of tungsten and titanium.
12. The device of claim 1 , wherein the layer of permittivity shielding comprises a highly conductive metal or metal alloy.
13. The device of claim 12 , wherein the layer of permittivity shielding comprises gold.
14. The device of claim 12 , wherein the layer of permittivity shielding is galvanically deposited.
15. The device of claim 12 , wherein the layer of permittivity shielding is sputter deposited.
16. The device of claim 1 , wherein the protective layer comprises silicone.
17. A bioimplantable sensor device shielded against changing permittivity comprising:
a semiconductor device having an exterior surface with a sensor formed thereon;
a first biocompatible protective layer overlying and adhered to a portion of the exterior surface of the semiconductor device;
a first layer of metallic adhesive overlying and adhered to the first biocompatible protective layer;
a layer of permittivity shielding overlying and adhered to the first layer of metallic adhesive;
a second layer of metallic adhesive overlying and adhered to the layer of permittivity shielding; and
a second, outermost biocompatible protective layer overlying and adhered to the second layer of metallic adhesive;
wherein the first layer of metallic adhesive, the layer of permittivity shielding, and the second layer of metallic adhesive cover the entire exterior surface of the semiconductor device except a part of the surface on which the sensor is formed.
18. The device of claim 17 , wherein the first and second biocompatible protective layers both comprise silicone.
19. The device of claim 17 , wherein the layer of permittivity shielding comprises gold.
20. The device of claim 17 , wherein the first and second layers of metallic adhesive both comprise an alloy of tungsten and titanium.