Method and apparatus for creating a W-mesa street
View Patent ↗A method for fabricating an epitaxial structure includes providing a wafer comprising one or more epitaxial layers. The wafer is divided into dice where the area between the dice are called streets. Each street has a slot formed on either side of the street. The slots penetrate through the epitaxial layer but not the substrate leaving a portion of the epitaxial layer intact between the slots creating a “W” shaped cross section. A protective layer is then formed on the wafer. A laser may be used to singulate the wafer in to individual dice. The laser divides each street between the slots. The barrier walls of the epitaxial layers protect the individual dice from debris created by laser separation.
1. A method for fabricating a semiconductor structure, comprising:
designating a street between a first portion of a wafer and a second portion of the wafer, wherein the street has a center, a first side and a second side;
forming at least two slots in the wafer,
wherein a first slot is formed between the first side of the street and the center of the street and a second slot is formed between the second side of the street and the center of the street,
wherein the first slot has an inner wall directly abutting a first electrical device formed in the wafer and an outer wall facing the center of the street;
wherein the second slot has an inner wall directly abutting a second electrical device formed in the wafer and an outer wall facing the center of the street;
wherein the first slot and the second slot electrically isolate the first electrical device and the second electrical device from the center of the street;
at least partially filling the first slot and the second slot with a protective material;
cutting along the center of the street, for at least partially singulating the wafer, while leaving a first portion of the wafer between the outer edge of the first slot and the center of the street and while leaving a second portion of the wafer between the outer edge of the second slot and the center of the street; and
removing the protective material from the first slot and the second slot.
2. The method of claim 1 , wherein the wafer comprises one or more epitaxial layers on a substrate.
3. The method of claim 2 , wherein the forming the slots includes penetrating all of the epitaxial layers and a portion the substrate.
4. The method of claim 2 , wherein the semiconductor structure is an LED wherein at least one of the epitaxial layers is an active layer wherein forming the slots includes penetrating the active layer completely.
5. The method of claim 1 wherein the wafer is divided into a plurality of dice with a street surrounding each die.
6. The method of claim 1 , further comprising dividing the wafer between the first slot and the second slot.
7. The method of claim 1 , wherein cutting along the center of the street comprises cutting along the center of the street using a laser.