Nitride semiconductor device
A nitride semiconductor device is provide that can reduce contact resistance of an ohmic electrode and a nitride semiconductor layer. In a GaN HFET, recesses ( 106, 109 ) are formed in a nitride semiconductor multilayer body ( 20 ) composed of an undoped GaN layer ( 1 ) and an undoped AlGaN layer ( 2 ) formed on an Si substrate ( 10 ), and a source electrode ( 11 ) and a drain electrode ( 12 ) are formed in the recesses ( 106, 109 ). In a region deeper than an interface (S 1 , S 2 ) between the GaN layer ( 1 ) and the source electrode ( 11 ) and drain electrode ( 12 ), which are formed from a TiAl material, a first chlorine concentration peak (P 11 ) is formed in vicinity of the interface, and a second chlorine concentration peak (P 22 ) having a chlorine concentration of 1.3×10 17 cm −3 or lower is formed at a position deeper than the first chlorine concentration peak (P 11 ).
1. A nitride semiconductor device comprising:
a substrate;
a nitride semiconductor multilayer body formed on the substrate and having a heterointerface; and
ohmic electrodes which are made from a TiAl material and at least part of which are formed on the nitride semiconductor multilayer body or in the nitride semiconductor multilayer body, wherein
the nitride semiconductor multilayer body includes:
a first nitride semiconductor layer formed on the substrate; and
a second nitride semiconductor layer formed on the first nitride semiconductor layer to make up a heterointerface in combination with the first nitride semiconductor layer, and wherein
a chlorine concentration distribution in a depthwise direction over a range from the ohmic electrodes formed from the TiAl material to the nitride semiconductor multilayer body has:
a first chloride concentration peak at a position in vicinity of an interface between the ohmic electrodes and the nitride semiconductor multilayer body and in a substrate side region from the interface; and
a second chlorine concentration peak at a position deeper than the first chloride concentration peak, and wherein
the chlorine concentration of the second chlorine concentration peak is
within a range of 3×10 16 cm −3 to 1.3×10 17 cm −3 .
2. The nitride semiconductor device as claimed in claim 1 , wherein
the position of the second chlorine concentration peak is at a depth within a range of 60 nm to 100 nm from the interface.
3. The nitride semiconductor device as claimed in claim 2 , wherein
the nitride semiconductor multilayer body includes
recesses which extend through the second nitride semiconductor layer and reach a two-dimensional electron gas layer in vicinity of the heterointerface, and wherein
at least part of the ohmic electrodes are buried in the recesses.
4. The nitride semiconductor device as claimed in claim 1 , wherein
the nitride semiconductor multilayer body includes
recesses which extend through the second nitride semiconductor layer and reach a two-dimensional electron gas layer in vicinity of the heterointerface, and wherein
at least part of the ohmic electrodes are buried in the recesses.
5. A nitride semiconductor device comprising:
a substrate;
a nitride semiconductor multilayer body formed on the substrate and having a heterointerface; and
ohmic electrodes which are made from a TiAl material and at least part of which are formed in the nitride semiconductor multilayer body, wherein
the nitride semiconductor multilayer body includes:
a first nitride semiconductor layer formed on the substrate; and
a second nitride semiconductor layer formed on the first nitride semiconductor layer to make up a heterointerface in combination with the first nitride semiconductor layer, and wherein
an oxygen concentration distribution in a depthwise direction over a range from the ohmic electrodes formed from the TiAl material to the nitride semiconductor multilayer body has
an oxygen concentration peak at a position in vicinity of an interface between the ohmic electrodes and the nitride semiconductor multilayer body and in a substrate side region from the interface, where
the oxygen concentration of the oxygen concentration peak is
within a range of 1.1×10 18 cm −3 to 6.8×10 18 cm −3 , and wherein
a chlorine concentration distribution in a depthwise direction over a range from the ohmic electrodes formed from the TiAl material to the nitride semiconductor multilayer body has
a chlorine concentration peak at a position in vicinity of the interface between the ohmic electrodes and the nitride semiconductor multilayer body and in a substrate side region from the interface, where
the chlorine concentration of the chlorine concentration peak is
within a range of 5.0×10 16 cm −3 to 9.6×10 17 cm −3 .
6. The nitride semiconductor device as claimed in claim 5 , wherein
the nitride semiconductor multilayer body includes
recesses which extend through the second nitride semiconductor layer and reach a two-dimensional electron gas layer in vicinity of the heterointerface, and wherein
at least part of the ohmic electrodes are buried in the recesses.