Method for the deposition of an organic material
The present invention relates to a method for the deposition of at least one layer of an organic material on a substrate by (a) providing a source of a solid organic material in an atmosphere at a pressure comprised between 50 and 200 kPa, (b) heating said organic material to a first temperature to produce a vapor of said organic material, (c) exposing at least one surface of a substrate having a second temperature lower than said first temperature to said vapor to deposit organic material from said vapor onto said at least one surface of said substrate.
1. A method for depositing at least one layer of an organic material onto a substrate, the method comprising
heating, in a deposition chamber, a source of a solid organic material in an atmosphere comprising air at a pressure of from 50 to 200 kPa to a first temperature to produce a vapor of the organic material, and
depositing, in the same deposition chamber, the organic material from the vapor onto at least one surface of the substrate exposed to the vapor and having a second temperature lower than the first temperature,
wherein no carrier gas is used in the method.
2. A method for producing an electronic device, the method comprising
depositing the at least one layer of the organic material on the substrate by the method of claim 1 .
3. The method according to claim 2 , wherein the electronic device is an organic electronic device.
4. The method according to claim 1 , wherein the at least one layer of the organic material is selected from the group consisting of
an organic semiconducting layer,
a dielectric or an insulating layer,
a layer of at least one surface modifying agent,
a layer with electron-conducting properties,
a layer of a hole-conducting material,
an exciton- and/or electron-conducting layer,
a multiplication layer,
a hole-injecting layer,
a hole-transporting layer,
a light-emitting layer,
an electron-transporting layer,
an electron-injecting layer,
an encapsulation layer,
a light-absorbing layer,
a sensor layer,
a photosensitive layer,
a barrier layer, and
a self-assembled monolayer.
5. The method according to claim 1 , wherein the at least one layer of the organic material is an organic semiconducting layer in an organic field effect transistor, an organic solar cell, or an organic light emitting diode.
6. The method according to claim 1 , wherein the pressure is from 80 to 120 kPa.
7. The method according to claim 1 , wherein the pressure is ambient pressure.
8. The method according to claim 1 , wherein the first temperature and the second temperature are both higher than 20° C.
9. The method according to claim 1 , wherein the first temperature is from 20 to 350° C.
10. The method according to claim 1 , wherein the second temperature is from 20 to 340° C.
11. The method according to claim 1 , wherein a difference between the first temperature and the second temperature is from 10 to 330° C.
12. The method according to claim 1 , wherein the atmosphere comprises a gas or a gas mixture that is inert towards the organic material.
13. The method according to claim 1 , wherein the substrate is moved through the vapor.
14. The method according to claim 13 , wherein the substrate is moved through areas with different concentration of the organic material in the vapor.
15. The method according to claim 13 , wherein the substrate is repeatedly moved through the vapor.
16. The method according to claim 1 , wherein the substrate is arranged above the source of the solid organic material.
17. The method according to claim 1 , wherein a distance between the source and the substrate is from 0.1 to 20 mm.
18. The method according to claim 1 , wherein the substrate is selected from the group consisting of an inorganic glass, quartz, a ceramic foil or plate, an undoped or a doped inorganic semiconductor, a polymeric material, a filled polymeric material, and a coated or an uncoated metallic foil or plate.
19. The method according to claim 1 , wherein a deposition rate of the at least one layer of the organic material on the substrate is from 1 to 200 nm/min.
20. The method according to claim 1 , wherein the organic material is selected from the group consisting of
a rylene diimide,
a naphthalene diimide,
tetraazaperopyrene,
a diketopyrrolopyrrole,
a fullerene,
a fullerene derivative,
a thiophene compound,
an aromatic compound with at least one condensed thiophene unit,
an acene,
a spiro compound,
a metal complex, and
an organo-silicon and organophosphorus compound, optionally in a form of a self-assembled monolayer.
21. The method according to claim 1 , wherein the organic material comprises at least one naphthalene diimide.
22. The method according to claim 1 , wherein
the at least one layer of the organic material is a polycrystalline organic semiconductor layer, and
the first temperature is from 20 to 350° C.
23. The method according to claim 1 , wherein
the at least one layer of the organic material is a layer of an organic electroluminescent device selected from the group consisting of a hole-injecting layer, a hole-transporting layer, a light-emitting layer, an electron-transporting layer and an electron-injecting layer, and
the first temperature is from 20 to 350° C.
24. The method according to claim 23 , wherein the layer is a hole transporting layer of an organic light emitting diode.
25. The method according to claim 1 , wherein
the at least one layer of the organic material is a self-assembled monolayer,
the source of the solid organic material is a material capable of forming the self-assembled monolayer, and
the first temperature is from 20 to 350° C.