Methods of printing solar cell contacts

1. A process of forming a front-side solar cell contact a silicon wafer having a p-type region, an n-type region, a p-n junction and an ARC layer on said front-side, comprising:

a. applying an ARC layer to the front-side of the silicon wafer,

b. printing a paste A having fire-through capability on the ARC layer, wherein the paste A is printed as a plurality of thin parallel finger lines having gaps therein to form a bottom print of split finger lines,

c. printing a paste B over paste A, wherein the paste B is printed in a grid pattern comprising

i. at least two busbars intersecting the bottom print of split finger lines at right angles and interposed in the gaps therein, and

ii. thin parallel finger lines forming a top print of finger lines superimposing the bottom print of finger lines,

wherein the total printed area of pastes A and B is less than 10% of the area of the front-side, and

d. firing the double-printed silicon wafer,

wherein the paste A comprises,

i. 50-95 wt % of a metal source comprising silver or a source of silver and at least one metal or source of a metal selected from the group consisting of nickel, copper, palladium, platinum, and combinations thereof,

ii. 0.5-15 wt % of a glass component, and

iii. 5-20 wt % of an organic vehicle,

wherein the paste A providing lower contact resistance than paste B, when both are fired, wherein the paste B comprises an organic vehicle and an inorganic portion comprising (b1) at least one electrically conductive metal powder and (b2) glass frit, and wherein at least one of paste A or paste B further comprises 0.01 to 5 wt % of an organolithium compound.

2. The process of claim 1 , wherein at least one of paste A and paste B includes a hot melt adhesive.

3. The process of claim 1 , wherein the metal source includes nickel, and wherein the nickel is provided in the form of an organonickel compound.

4. The process of claim 1 , wherein the glass component of paste A includes at least one Pb-containing glass frit having a softening point of 300 to 550° C., wherein the glass frit includes an oxide of a transition metal selected from the group of Mn, Fe, Co, Ni, Cu, Ti, V, Cr, W, Nb, Ta, Hf, Rh, Ru, Pd, Pt, and combinations thereof to achieve lower contact resistance and a wider firing window.

5. The process of claim 1 , wherein the paste includes 0.01-10 wt % of a metal acetyl acetonate, wherein the metal of the metal acetyl acetonate is selected from the group consisting of V, Sb, Y, Co, Ni, Zr, Sn, Zn, Li, Mn, Cu, Ce, Ru, Rh, and Fe.

6. The process of claim 1 , wherein paste A further comprises 0.01-10 wt % of at least one metal silicate, wherein the metal silicate has the formula:

MaSibOc+2b, wherein a=1, 2, or 3, b=1, 2, or 3, c=a/2, a, or 2a, and metal M is selected from the group of: Zn, Mg, Li, Mn, Co, Ni, Cu, Gd, Zr, Ce, Fe, Al, and Y.

7. The process of claim 1 , wherein paste A further comprises an organozinc compound.

8. The process of claim 1 , wherein paste B comprises:

a. 40-85 wt % of a metal source comprising of the at least one electrically conductive metal powder;

b. 0.5-15 wt % of the glass frit; and

c. 5-20 wt % of an organic vehicle.

9. The process of claim 1 , wherein the glass frit of paste B is not capable of firing through an antireflective coating.

10. The process of claim 1 , wherein the Tg of the glass frit of paste B is not higher than the Tg of the glass component of paste A.

11. The process of claim 1 , wherein the total proportion of the at least one electrically conductive metal powder and the glass frit in paste B is less than the total proportion of the metal source and the glass component in paste A.

12. The process of claim 1 , wherein at least one of paste A and paste B is printed with an ink jet printer.

13. The process of claim 1 , wherein an aspect ratio of the plurality of thin parallel finger lines printed with paste A and paste B is 0.1 to 1.