Solid-state image pickup device, method of manufacturing the same, and electronic apparatus

1. A solid-state image pickup device comprising:

an organic photoelectric conversion layer;

a passivation layer formed to cover a top of the organic photoelectric conversion layer; and

an insulating film formed on the passivation layer and in a slit produced on a level difference in the passivation layer, the insulating film having a smaller refractive index than that of the passivation layer.

2. The solid-state image pickup device according to claim 1 , wherein an organic photoelectric conversion section configured by including the organic photoelectric conversion layer and a photoelectric conversion section formed in a semiconductor base are vertically laminated.

3. The solid-state image pickup device according to claim 1 , wherein the insulating film is a film formed by an atomic layer deposition method (ALD method).

4. The solid-state image pickup device according to claim 1 , wherein an upper electrode connected to the organic photoelectric conversion layer is formed to extend outward from the organic photoelectric conversion layer, and a contact opening section and a wiring layer are further included, the contact opening section being formed in the passivation layer and the insulating film on a portion formed to extend of the upper electrode, the wiring layer being formed inclusive of the inside of the contact opening section and being connected to the upper electrode.

5. A method of manufacturing a solid-state image pickup device including an organic photoelectric conversion layer, the method comprising steps of:

forming the organic photoelectric conversion layer;

forming a passivation layer to cover a top of the organic photoelectric conversion layer; and

forming an insulating film on the passivation layer and in a slit produced on a level difference in the passivation layer, the insulating film having a smaller refractive index than that of the passivation layer.

6. The method of manufacturing the solid-state image pickup device according to claim 5 , wherein the insulating film is formed with use of an atomic layer deposition method (ALD method).

7. An electronic apparatus comprising:

an optical system;

a solid-state image pickup device including an organic photoelectric conversion layer, a passivation layer, and an insulating film, the passivation layer being formed to cover a top of the organic photoelectric conversion layer, and the insulating film being formed on the passivation layer and in a slit produced on a level difference in the passivation layer and having a smaller refractive index than that of the passivation layer; and

a signal processing circuit configured to process an output signal of the solid-state image pickup device.