Passive circuit for improved failure mode handling in power electronics modules
View Patent ↗A power electronics module for enhancing short circuit failure mode (SCFM) transitions. The module is adapted to disconnect a gate unit from the module using a first switch, upon a failure of at least one of a plurality of semiconductor chips during which the failed chip enters an SCFM, and connect a passive circuit arrangement, including at least one capacitor and at least one resistor, to the module using a second switch. The passive circuit arrangement is adapted to switch on at least one of the remaining non-failed semiconductor chips.
1. A power electronics, PE, module including, a plurality of semiconductor chips connected in parallel, a gate unit, GU, and a passive circuit arrangement, wherein the GU is connected to the gates of the plurality of semiconductor chips via a first switch and the passive circuit arrangement is connected to the gates of the plurality of semiconductor chips via a second switch, and wherein the passive circuit arrangement includes a parallel connection of at least one capacitor and at least one resistor, and wherein
the first switch is adapted to, under normal operation, have a closed position, and, upon a failure of at least one of the plurality of semiconductor chips change to an open position and thereby disconnect the plurality of semiconductor chips from the GU,
the second switch is adapted to, under normal operation, have an open position, and, upon a failure of at least one of the plurality of semiconductor chips change to a closed position, wherein the passive circuit arrangement is connected to the gates of the plurality of semiconductor chips, and wherein the passive circuit arrangement is adapted to switch on at least one of the remaining non-failed plurality of semiconductor chips,
said one or a plurality of semiconductor chips are configured to, following a chip failure, enter a short circuit failure mode (SCFM), and
the module is configured to charge the at least one capacitor with energy from arcing of said one of a plurality of semiconductor chips, and wherein the arcing occurs at the end of the lifetime of said SCFM.
2. The PE module according to claim 1 , wherein the module further includes a plurality of resistors, and wherein each of the plurality of resistors is connected to a respective gate or a respective set of gates of the plurality of semiconducting chips.
3. The PE module according to claim 2 , wherein the plurality of resistors have different resistance values for controlling which of the remaining non-failed semiconductor chips to switch on.
4. The PE module according to claim 2 , wherein at least two of the plurality of resistors have the same resistance values for controlling which of the remaining non-failed semiconductor chips to switch on.
5. The PE module according to claim 1 , wherein the semiconductor chips are included in the group of IGBT, BIGT, IGCT, MOSFET, JFET and thyristors.
6. The PE module according to claim 1 , wherein the semiconductor chips are bipolar- and mos-controlled semiconductor devices.