Optoelectronic component having a UV-protecting substrate and method for producing the same

1. An optoelectronic component, comprising:

a carrier;

a protective layer on or above the carrier;

a first electrode on or above the protective layer;

an organic functional layer structure on or above the first electrode; and

a second electrode on or above the organic functional layer structure;

wherein the protective layer comprises a matrix and UV-absorbing particles, wherein the matrix comprises a glass and wherein the UV-absorbing particles are formed as scattering centers and are applied on or above the carrier, and the UV-absorbing particles being embedded in the matrix such that the protective layer has a lower transmission than the carrier for electromagnetic radiation within at least one of a plurality of respective wavelength ranges having an upper range bound value that is less than approximately 400 nm; and

wherein the protective layer has a thickness in a range of 1 μm to 100 μm.

2. The optoelectronic component as claimed in claim 1 , wherein the carrier is embodied in a planar fashion.

3. The optoelectronic component as claimed in claim 1 , wherein the carrier comprises a soft glass or is formed therefrom.

4. The optoelectronic component as claimed in claim 3 , wherein the soft glass is a soda-lime silicate glass.

5. The optoelectronic component as claimed in claim 1 , wherein the matrix of the protective layer has a refractive index of greater than approximately 1.7.

6. The optoelectronic component as claimed in claim 5 , wherein the matrix of the protective layer is embodied in an amorphous fashion.

7. The optoelectronic component as claimed in claim 1 , wherein the matrix of the protective layer is embodied in an amorphous fashion.

8. The optoelectronic component as claimed in claim 1 , wherein the matrix of the protective layer comprises or is formed from a substance or substance mixture from the group of glass systems: PbO-containing systems: PbO—B 2 O 3 , PbO—SiO 2 , PbO—B 2 O 3 —SiO 2 , PbO—B 2 O 3 —ZnO 2 , PbO—B 2 O 3 —Al 2 O 3 ; Bi 2 O 3 -containing systems: Bi 2 O 3 —B 2 O 3 , Bi 2 O 3 —B 2 O 3 —SiO 2 , Bi 2 O 3 —B 2 O 3 —ZnO, Bi 2 O 3 —B 2 O 3 —ZnO—SiO 2 .

9. The optoelectronic component as claimed in claim 8 , wherein the substance or the substance mixture of the matrix further comprises or is formed from a substance from the group of substances: Ce, Fe, Sn, Ti, Pr, Eu and/or V compounds.

10. The optoelectronic component as claimed in claim 1 , wherein one type of the UV-absorbing particles comprises or is formed from a substance or substance mixture or a stoichiometric compound from the group of substances: TiO 2 , CeO 2 , Bi 2 O 3 , ZnO, SnO 2 , phosphors: Ce 3+ doped garnets such as YAG:Ce and LuAG, Eu 3+ doped nitrides, sulfides, SIONS, sialon, orthosilicates, chlorosilicates, chlorophosphates, BAM (barium magnesium aluminate:Eu) and/or SCAP, halophosphate, glass particles, metallic nanoparticles.

11. The optoelectronic component as claimed in claim 1 , wherein the optoelectronic component is embodied as an organic light emitting diode or as an organic solar cell.

12. A method for producing an optoelectronic component, the method comprising:

forming a protective layer on or above a carrier;

forming a first electrode on or above the protective layer;

forming an organic functional layer structure on or above the first electrode; and

forming a second electrode on or above the organic functional layer structure;

wherein the protective layer is designed having a matrix and UV-absorbing particles, the matrix comprising a glass and the UV-absorbing particles are formed as scattering centers and are applied on or above the carrier and being embedded in the matrix in such a way that the protective layer has a lower transmission of electromagnetic radiation than the carrier for electromagnetic radiation within at least one of a plurality of respective wavelength ranges having an upper range bound value that is less than approximately 400 nm; and

wherein the protective layer is formed having a thickness in a range of 1 μm to 100 μm.

13. The method as claimed in claim 12 ,

wherein forming the protective layer comprises applying a glass solder powder to or above the carrier, wherein the glass solder powder is liquefied in order to form the protective layer.

14. The method as claimed in claim 13 ,

wherein the UV-absorbing particles are added to the glass solder powder before the glass solder powder is applied to the carrier.

15. The method as claimed in claim 14 ,

the glass solder powder are applied on or above the ply of UV-absorbing scattering centers, and the glass is liquefied in such a way that one part of the liquefied glass flows between the scattering centers toward the surface of the carrier in such a way that another part of the liquefied glass remains above the scattering centers.

16. The method as claimed in claim 13 , the glass solder powder are applied on or above the ply of UV-absorbing scattering centers, and the glass is liquefied in such a way that one part of the liquefied glass flows between the scattering centers toward the surface of the carrier in such a way that another part of the liquefied glass remains above the scattering centers.