IP Library Granted Patent US 9,416,311
Granted Patent B2
US 9,416,311 · App. 14/399,277 · Granted Aug 16, 2016

Boron chain embedded carbon nanotubes

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Quick Facts
Patent No.
US 9,416,311
App. No.
14/399,277
Granted
Aug 16, 2016
Kind
B2
Abstract

Compositions comprising boron chain embedded carbon nanotubes, methods of making, and methods of using are provided. Electroluminescent compositions comprising the same are also provided.

Claims (31)

1. A composition comprising a boron chain embedded inside a carbon nanotube and an indium-tin-oxide (ITO) glass plate.

2. The composition of claim 1 , wherein the composition is an electroluminescent composition.

3. The composition of claim 1 , wherein the carbon nanotube is coated on a Fluorine-Tin-Oxide (FTO) glass plate.

4. The composition of claim 3 , wherein the ITO glass plate and the FTO glass plate are separated by a gap of about 0.18 mm.

5. The composition of claim 1 , wherein the composition generates pure white light upon being powered by an electrical current.

6. A method of preparing a boron chain embedded inside a carbon nanotube, the method comprising:

contacting a hydrocarbon gas and boron gas in a furnace comprising a metal catalyst to yield the boron chain embedded inside the carbon nanotube.

7. The method of claim 6 , wherein the contacting comprises contacting a hydrocarbon gas and boron gas in a furnace comprising a mischmetal.

8. The method of claim 6 , wherein the contacting comprises contacting a hydrocarbon gas and boron gas in a furnace at a temperature of at least about 1100 degrees Celsius and at a pressure of 6 bar (600 kPa).

9. The method of claim 6 , wherein contacting comprises contacting a hydrocarbon gas and boron gas in a furnace comprising a metal catalyst-encapsulated by a quartz tube.

10. The method of claim 6 , further comprising, prior to the contacting step, heating the furnace comprising the metal catalyst to a temperature of about 550 degrees Celsius at a rate of about 5 degrees Celsius per minute.

11. The method of claim 10 , further comprising passing hydrogen gas through the furnace continuously at a pressure of about 2 bar (200 kPa).

12. The method of claim 6 , further comprising generating the boron gas by contacting sodium borohydrate (NaBH 4 ) and ammonium sulphate (NH 4 ) 2 SO 4 in the presence of an inert gas under conditions sufficient to yield boron gas (B 3 N 3 H 6 ).

13. The method of claim 12 , wherein generating comprises generating the boron gas by contacting sodium borohydrate (NaBH 4 ) and ammonium sulphate (NH 4 ) 2 SO 4 in the presence of argon gas under conditions sufficient to yield boron gas (B 3 N 3 H 6 ).

14. The method of claim 12 , wherein the generating further comprises contacting sodium borohydrate and ammonium sulphate in a container comprising a high boiling point electronegative non-volatile electrolyte and iodide.

15. The method of claim 14 , wherein the contacting comprises contacting sodium borohydrate and ammonium sulphate in a container comprising tetraglyme and iodide.

16. A system for producing a boron chain embedded inside a carbon nanotube, the system comprising:

a gas inlet;

a gas outlet;

a boron gas generator;

a furnace;

a quartz tube; and

a water trap,

wherein the gas inlet and boron gas generator are connected to a first side of the furnace such that a first gas from the gas inlet and a product from the boron gas generator enter the furnace simultaneously;

wherein the gas outlet is connected to a second side of the furnace via the water trap; and

wherein the quartz tube is situated inside the furnace.

17. The system of claim 16 , wherein the system comprises a metal catalyst situated inside the quartz tube.

18. The system of claim 17 , wherein the metal catalyst is situated on a quartz substrate situated inside the quartz tube.

19. The system of claim 16 , further comprising a port for the introduction of a hydrocarbon gas connected to the gas inlet.

20. The system of claim 16 , further comprising a port for the introduction of hydrogen gas connected to the gas inlet.

21. The system of claim 16 , further comprising a port for the introduction of an inert gas into the boron gas generator.

Assignments (2)
SECURITY INTEREST Recorded Jan 29, 2019
From: EMPIRE TECHNOLOGY DEVELOPMENT LLC
To: CRESTLINE DIRECT FINANCE, L.P.
Reel/Frame 048373/0217 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 7, 2014
From: THEVASAHAYAM, AROCKIADOSS
To: EMPIRE TECHNOLOGY DEVELOPMENT LLC
Reel/Frame 034193/0476 →