Nitride semiconductor light-emitting element
View Patent ↗A nitride semiconductor light-emitting element including a high concentration silicon-doped layer doped with silicon at a high concentration of 2×10 19 atoms/cm 3 , and a dislocation reduction layer for laterally bending a threading dislocation on the high concentration silicon-doped layer.
1. A nitride semiconductor light-emitting element comprising:
a substrate;
a first nitride semiconductor layer provided on said substrate;
a light-emitting layer provided on said first nitride semiconductor layer; and
a second nitride semiconductor layer provided on said light-emitting layer,
wherein said first nitride semiconductor layer includes a high concentration silicon-doped layer in which silicon is doped at a high concentration of at least 2×10 19 atoms/cm 3 and a dislocation reduction layer for laterally bending a threading dislocation on said high concentration silicon-doped layer and having a bottom surface facing the high concentration silicon-doped layer and a top surface facing the light-emitting layer, and
a silicon concentration in the dislocation reduction layer is lowered gradually from the high concentration of the high concentration silicon-doped layer toward the light-emitting layer, so that the silicon concentration in the dislocation reduction layer is higher at the bottom surface of the dislocation reduction layer than at the top surface of the dislocation reduction layer, and so that a silicon concentration in the dislocation reduction layer at a portion 1.5 μm away from a surface of the high concentration silicon-doped layer, which is on a side of said light-emitting layer, toward the light-emitting layer is at least 1×10 17 atoms/cm 3 .
2. The nitride semiconductor light-emitting element according to claim 1 , wherein a thickness of said high concentration silicon-doped layer is not more than 0.5 μm.
3. The nitride semiconductor light-emitting element according to claim 1 , wherein a layer containing magnesium is arranged between said dislocation reduction layer and said light-emitting layer.
4. The nitride semiconductor light-emitting element according to claim 1 , wherein a macrostep is included which has a height of at least 20 nm and not more than 300 nm, and a lateral width of at least 40 μm and not more than 300 μm.
5. The nitride semiconductor light-emitting element according to claim 1 , wherein the nitride semicondcutor light-emitting element further comprises an inclined facet layer and a buried layer to fill a space of the inclined facet layer, and the high concentration silicon-doped layer is disposed on the inclined facet layer and the buried layer.